Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-12-15
著者
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Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
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Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Mitsugi Satoshi
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shimizu M
Tokyo Inst. Technology Yokohama
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OKUMURA Hajime
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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SHEN Xu-Qiang
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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IDE Toshihide
Advanced Industrial Science and Technology (AIST), Power Electronics Research Center
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CHO Hyung-Koun
Department of Metallurgical Engineering, Dong-A University
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IDE Toshihide
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Okumura H
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Okumura H
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Okumura H
Electrotechnical Lab. Ibaraki Jpn
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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Shen Xu-qiang
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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Shen X‐q
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
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Shimizu M
Tokyo Univ. Agriculture & Technol. Koganei
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Ide Toshihide
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
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Okunuma H
National Institute Of Advanced Industrial Science And Technology
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Cho Hyung-koun
Department Of Metallurgical Engineering Dong-a University
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Okumura Hajime
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
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