Okumura H | Neutron Scattering Laboratory Issp The University Of Tokyo

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著作論文

Static Correlation and Dynamical Properties of Tb^-moments in Tb_2Ti_2O_7 : Neutron Scattering Study
Neutron Scattering Study of the Spin Correlation in the Spin Ice System Ho_2Ti_2O_7
Neutron Diffraction Study of Pyrochlore Compound R_2Ru_2O_7 (R=Y, Nd) above and below the Spin Freezing Temperature : Condensed Matter: Electronic Properties, etc.
Neutron Inelastic Scattering Study on a Single Crystal of Tb_2Ti_2O_7,a Magnetically Frustrated Pyrochlore System
Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer
AIN/AlGaN/GaN Metal Insulator Semiconductor Heterostructure Field Effect Transistor
Effects of High-k Passivation Films on AlGaN/GaN HEMT
p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
High breakdown voltage AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with TiO2/SiN gate insulator (Special issue: Solid state devices and materials)
High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
GaN Crystal Growth on Sapphire Substrate Using Islandlike GaN Buffer Formed by Repetition of Thin-Layer Low-Temperature Deposition and Annealing in rf-Plasma Molecular Beam Epitaxy
Improvement of GaN Crystal Quality in RF-MBE Using Thin Low-Temperature-Grown GaN Buffer Layers
Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AIN Films by Plasma-Assisted Molecular Beam Epitaxy
Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs
Roles of Si Irradiation during the Growth Interruption on GaN Film Qualities in Plasma-Assisted Molecular Beam Epitaxy : Semiconductors
Indium Roles on the GaN Surface Studied Directly by Reflection High-Energy Electron Diffraction Observations : Semiconductors
High-Quality GaN Layers on c-Plane Sapphire Substrates by Plasma-Assisted Molecular-Beam Epitaxy Using Double-Step AlN Buffer Process
Temperature Characteristics AlGaN/GaN Heterojunction Field Effect Transistors
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching With Hot Phosphoric Acid : Semiconductors
Optimization of GaN Growth with Ga-Polarity by Referring to Surface Reconstruction Reflection High-Energy Electron Diffraction Patterns : Semiconductors
High-Quality InGaN Films Grown on Ga-Polarity GaN by Plasma-Assisted Molecular-Beam Epitaxy
AlGaN/GaN Heterojunction High Electron Mobility Transistors Using Ga-Polarity Crystal Growth by Plasma-Assisted Molecular Beam Epitaxy
Essential Change in Crystal Qualities of GaN Films by Controlling Lattice Polarity in Molecular Beam Epitaxy
Growth of Droplet-Free AlGaN Buffer Layer with +c Polarity by Molecular Beam Epitaxy
Characterization of Polarity of Wurtzite GaN Film Grown by Molecular Beam Epitaxy Using NH_3
Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
Characterization of Polarity of Plasma-Assisted Molecular Beam Epitaxial GaN{0001}Film Using Coaxial Impact Collision Ion Scattering Spectroscopy
Computer Simulation for Analysis of Lattice Polarity of Wurtzite GaN{0001} Film by Coaxial Impact Collision Ion Scattering Spectroscopy
Incommensurate Magnetic Structure of the Heavy Fermion Antiferromagnet Ce_7Ni_3 : Condensed Matter: Electronic Properties, etc.
In situ Observation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
Chemical Bonding Properties of Cubic III-Nitride Semiconductors
Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy

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