The Electrical Characteristics of Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Cubic Silicon Carbide
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2003-06-15
著者
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Ishida Y
Kitakyushu Foundation For The Advancement Of Ind. Sci. And Technol. Kitakyushu Jpn
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LEE Kin
Japan Atomic Energy Agency
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OKUMURA Hajime
National Institute of Advance Industrial Science and Technology (AIST), Power Electronics Research C
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ARAI Kazuo
National Institute of Advanced Industrial Science and Technology
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Okumura H
Neutron Scattering Laboratory Issp The University Of Tokyo
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YOSHIKAWA Masahito
Japan Atomic Energy Research Institute, Takasaki Radiation Chemistry Research Establishment
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ISHIDA Yuuki
National Institute of Advanced Industrial Science and Technology
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TAKAHASHI Tetsuo
National Institute of Advanced Industrial Science and Technology
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Takahashi Tetsuo
National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center
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Yoshikawa Masahito
Japan Atomic Energy Research Institute (jaeri)
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KOJIMA Kazutoshi
National Institute of Advanced Industrial Science and Technology (AIST)
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TANAKA Yasunori
National Institute of Advanced Industrial Science and Technology (AIST)
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KAMIYA Tomihiro
Japan Atomic Energy Research Institute (JAERI)
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Takahashi T
Japan Advanced Institute Of Science And Technology
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