Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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ITOH Hisayoshi
Japan Atomic Energy Research Institute
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Itoh Hisayoshi
Japan Atomic Energy Agency
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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LEE Kin
Japan Atomic Energy Agency
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OHI Akihiko
Japan Atomic Energy Agency
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PENSL Gerhard
Institute of Applied Physics, University of Erlangen-Nurnberg
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Pensl Gerhard
Institute Of Applied Physics University Of Erlangen-nurnberg
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Ohshima Takeshi
Japan Atomic Energy Agency
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Oshima Takeshi
Japan Atomic Energy Agency
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