Evaluation of Transient Current in Si PIN Photodiode Induced by High-Energy Charged Particles
スポンサーリンク
概要
- 論文の詳細を見る
Single Event Transient (SET) current subjects to the Bit Error Rate (BER) degradation of optical data links used in space radiation environments. Here, SET currents induced by heavy ions with energy of several MeV are measured by using the Transient Ion Beam Induced Current (TIBIC) technique. In order to simulate the SET current waveforms using the Transient Charge Technique (TCT) based on Ramo's theorem, correction factors to the low-field mobility are introduced. A reasonable agreement between experiments and simulations is obtained under slight theoretical limit.
- 東海大学の論文
著者
-
HIRAO Toshio
Japan Atomic Energy Research Institute
-
ITOH Hisayoshi
Japan Atomic Energy Research Institute
-
Hirao Toshio
Japan Atomic Energy Agency
-
Onoda Shinobu
Course Of Applied Science
-
Itoh Hisayoshi
Japan Atomic Energy Agency
-
Okamoto Tsuyoshi
Department of Applied Science, Course of Energy Engineering
-
Okamoto Tsuyoshi
Department Of Applied Science Course Of Energy Engineering
-
Okamoto Tsuyoshi
Department Of Applied Science Course Course Of Energy Engineering
-
Okamoto Tsuyoshi
Department Of Applied Chemistry Faculty Of Engineering Osaka Univetsity
関連論文
- Gamma Radiation Effects on the Ohmic Contact of AlGaN/GaN HEMTs
- Investigation of Positron Moderator Materials for Electron-Linac-Based Slow Positron Beamlines
- Anomalous Increase in Effective Channel Mobility on Gamma-Irradiated p-Channel SiC Metal-Oxide-Semiconductor Field-Effect Transistors Containing Step Bunching
- Evaluation of Transient Current in Si PIN Photodiode Induced by High-Energy Charged Particles
- Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their
- Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
- Generation of Interface Traps and Oxide-Trapped Charge in 6H-SiC Metal-Oxide-Semiconductor Transistors by Gamma-Ray Irradiation
- Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
- Defects in Ion-Implanted 3C-SiC Probed by a Monoenergetic Positron Beam
- Annealing Enhancement Effect by Light Illumination on Proton Irradiated Cu(In,Ga)Se_2 Thin-Film Solar Cells : Nuclear Science, Plasmas, and Electric Discharges
- Radiation Resistant Low Bandgap InGaASP Solar Cell for Multi-Junction Solar Cells : Semiconductors
- Investigation of Vacancy-Type Defects in P^+-Implanted 6H-SiC Using Monoenergetic Positron Beams
- Observation of VUV Emission Spectra from DC Positive Corona Discharge
- Luminescence from Fluorescent Material Excited by Piezoelectric Transformer
- Luminous Phenomenon of Silent Discharge Using a Piezoelectric Transformer
- A New Series of Liquid Crystals Having a Terminal Carbonyl Group
- Selective Bromination of Aromatic Amines by Use of Tetrabutylammonicm Tribromide and Benzyltrimethlammonnium Tribromide
- Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/O_2
- Shape Deformation Analysis of Rotating Nanoparticle by Molecular Dynamics Method
- Molecular Dynamics Simulation of Particle Breakup in Collision with Moving Solid Surface
- Bromination of aromatic amines by use of benzyltrimethylammonium chlorobromate (1-)
- Magnetization and Colossal Magnetoresistance Effect of La_Bi_XMnO_3 Systems(ABSTRACTS OF PROCEEDINGS OF THE SCHOOL OF ENGINEERING SERIES J TOKAI UNIVERSITY -2003-2004-)
- Glucose Sensitivity of Thiol-modified Gold Electrodes Having Immobilized Glucose Oxdase and 2-Aminoethylferrocene
- Bromination of phenols by use of benzyltrimethylammonium chlorobromate (1-)
- Computer Simulation of Cooling Properties of UF_5 Hot-Clusters in Argon
- Characterization of Light Element Impurities in Ultrathin Silicon-on-Insulator Layers by Luminescence Activation Using Electron Irradiation
- Si Substrate Suitable for Radiation-Resistant Space Solar Cells
- Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells
- Analysis of Anomalous Degradation of Cu(In,Ga)Se2 Thin-Film Solar Cells Irradiated with Protons
- Halogenation using quaternary ammonium polyhalides. IV. Selective bromination of phenols by use of tetraalkylammonium tribromides.
- Synthesis of dibromoacetyl derivatives by use of benzyltrimethylammonium tribromide.
- Halogenation using quaternary ammonium polyhalides. XVII. Iodination of acetanilide derivatives with benzyltrimethylammonium dichloroiodate and zinc chloride.
- Halogenation using quaternary ammonium polyhalides. xi. Bromination of acetanilides by use of tetraalkylammonium polyhalides.
- Halogenation Using Quaternary Ammonium Polyhalides. XXXI. Halogenation of Thiophene Derivatives with Benzyltrimethylammonium Polyhalides.
- Halogenation using quaternary ammonium polyhalides. VI. Bromination of aromatic amines by use of benzyltrimethylammonium tribromide.
- Halogenation using quaternary ammonium polyhalides. XXVII. Chloroiodination of alkenes with benzyltrimethylammonium dichloroiodate.
- Oxidation using quaternary ammonium polyhalides. V. Selective oxidation of benzyl alcohols by the use of benzyltrimethylammonium tribromide.