Radiation Resistance of Wide Band Gap $n^{+}/ p$ AlInGaP Solar Cell for High-Efficient Multijunction Space Solar Cells

概要

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The effects of 30 keV proton irradiation on $n^{+}/ p$ AlInGaP solar cells are presented here. As the proton fluence increases to more than $1\times 10^{10}$ cm-2, the maximum power $P_{\text{max}}$ of the cell decreases markedly due to the introduction of defects by proton irradiation. From the changes in minority-carrier diffusion length determined by quantum efficiency modeling as a function of fluence, the damage constant $K_{L}$ for $ p$-AlInGaP was estimated to be about $5.0\times 10^{-5}$. This value is comparable to that observed from 3 MeV proton-irradiated $ p$-InGaP whereas it is lower than that observed from 3 MeV proton-irradiated $ p$-InGaAsP and $ p$-InGaAs cells. The maximum power recovery of the cell was observed by minority-carrier-injection-enhanced annealing (1 A/cm2), and the annealing activation energy for 30 keV proton-irradiation-induced defects in $ p$-AlInGaP was determined as $\Delta E = 0.42$ eV.
Japan Society of Applied Physicsの論文
2007-07-25