スポンサーリンク
Japan Society of Applied Physics | 論文
- Gain-Clamped Double-Pass L-Band Erbium-Doped Fiber Amplifier Using A Ring Laser and Fiber Bragg Grating
- Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
- Electrostatic model of solid-state capacitor with ionizable charge traps
- Ge/Si Heterojunction Photodiodes Fabricated by Wafer Bonding
- Periodically Aligned Submicron Dots of Silicon and Nickel Fabricated by Irradiation with Linearly Polarized Nd:YAG Pulsed Laser
- Surface Control Process of AlGaN for Suppression of Gate Leakage Currents in AlGaN/GaN Heterostructure Field Effect Transistors
- Seeded Growth of GaN Single Crystals by Na Flux Method Using Na Vapor
- Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
- AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
- Rapid Energy Transfer Annealing for the Crystallization of Amorphous Silicon
- New Transparent Conducting Al-doped ZnO Film Preparation Techniques for Improving Resistivity Distribution in Magnetron Sputtering Deposition
- Influence of Elastic Scattering on the Neutron-Induced Single-Event Upsets in a Static Random Access Memory
- High-Speed Substrate-Emitting Micro-Light-Emitting Diodes for Applications Requiring High Radiance
- Modulation of NiGe/Ge Contact Resistance by S and P Co-introduction
- Oxygen Plasma Functioning of Charge Carrier Density in Zinc Oxide Thin-Film Transistors
- Perfectly matched layers for elastic waves in piezoelectric solids
- Direct patterning in ZnO film formation by surface discharge technique
- Fabrication of AlGaN Two-Dimensional Photonic Crystal Nanocavities by Selective Thermal Decomposition of GaN
- Formation of Four Phase-Locked Gaussian Beams by Saturable Absorber in a Neodymium-Doped Yttrium Aluminum Garnet Laser
- Point Spread Function for the Calculation of Acid Distribution in Chemically Amplified Resists Used for Electron-Beam Lithography