AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
スポンサーリンク
概要
- 論文の詳細を見る
AlGaN/GaN heterostructure field-effect transistors (HFETs) with a gate length ($L_{\text{G}}$) of 60–250 nm were fabricated on a sapphire substrate. The HFET structure was grown by plasma-assisted molecular-beam epitaxy, and a 2-nm-thick SiN film was formed on the device surface by catalytic chemical vapor deposition. All of the HFETs showed outstanding DC device performance. They exhibited maximum drain current densities of 1.50–1.55 A/mm and extrinsic transconductances of 340–400 mS/mm. The 60-nm-gate HFET had a current gain cut-off frequency ($ f_{\text{T}}$) of 152 GHz and a maximum oscillation frequency ($ f_{\text{max}}$) of 173 GHz. To our knowledge, the $f_{\text{T}}$ and $f_{\text{max}}$ are the highest ever reported for GaN-based transistors. These superior high-frequency characteristics were achieved with a process using a thin and high-Al-content barrier layer, high-quality catalytic chemical vapor deposition (Cat-CVD) SiN passivation, and sub-0.1-μm gates defined by electron-beam lithography.
- Japan Society of Applied Physicsの論文
- 2005-04-10
著者
-
MATSUI Toshiaki
National Institute of Info. & Com. Tech.
-
HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
関連論文
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
- E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
- Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
- Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
- AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
- InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
- High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
- Si-Ion Implantation Doping in \beta-Ga
- High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
- Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
- Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
- AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
- Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy