Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る

著者

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• Hirose Nobumitsu

  National Inst. Of Information And Communications Technology

• Hanafusa Hiroaki

  Graduate School Of Engineering Tokyo University Of Agriculture And Technology

• Suda Yoshiyuki

  Graduate School Of Engineering Hokkaido University

• KASAMATSU Akifumi

  National Inst. of Information and Communications Technology

• MIMURA Takashi

  National Institute of Information and Communications Technology

関連論文

• Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
• AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
• Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
• Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
• Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
• Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
• E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
• Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
• Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
• Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
• Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
• Relaxation Behavior of Sputter Epitaxy Si_Ge_x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT
• SiO_x/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC
• Room Temperature Oscillation in Si/Si_Ge_x Resonant Tunneling Diode
• InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy
• SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
• Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
• High-PVCR Si/Si_Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
• Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
• Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
• Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
• Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
• Effect of Gate-Recess Structure on Electron Transport in InP-Based High Electron Mobility Transistors Studied by Monte Carlo Simulations
• High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
• High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
• Effects of Heterointerface Flatness on Device Performance of InP-Based High Electron Mobility Transistor
• Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
• High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors
• Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
• Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
• Erratum: "High-Performance Short-Gate InAlN/GaN Heterostructure Field-Effect Transistors"
• Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors
• AlGaN/GaN Heterostructure Field-Effect Transistors with Current Gain Cut-off Frequency of 152 GHz on Sapphire Substrates
• Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy

もっと見る 閉じる

スポンサーリンク