Room Temperature Oscillation in Si/Si_<1-x>Ge_x Resonant Tunneling Diode

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• Suda Yoshiyuki

  Graduate School Of Engineering Hokkaido University

• MAEKAWA Hirotaka

  Graduate School of Engineering, Tokyo University of Agriculture and Technology

• ASAOKA Naoya

  Graduate School of Engineering, Tokyo Metropolitan University

• SUHARA Michihiko

  Graduate School of Engineering, Tokyo Metropolitan University

• Asaoka Naoya

  Graduate School Of Engineering Tokyo Metropolitan University

• Suhara Michihiko

  Graduate School Of Engineering Tokyo Metropolitan University

• Maekawa Hirotaka

  Graduate School Of Engineering Tokyo University Of Agriculture And Technology

関連論文

• Effects of Oxygen and Substrate Temperature on Properties of Amorphous Carbon Films Fabricated by Plasma-Assisted Pulsed Laser Deposition Method
• Evaluation of Ion and Radical Fluxes in CH_4/H_2 Plasma for CNT Growth
• Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
• Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
• Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
• Deposition of Tungsten Carbide Thin Films by Simultaneous RF Sputtering
• Relaxation Behavior of Sputter Epitaxy Si_Ge_x Film on P-Type Si(001) and NDR Observation from Hole-Tunneling RTD at RT
• SiO_x/β-SiC/Si MIS Resistive Memory Devices Formed by One- and Two-Stage Oxidation of β-SiC
• Room Temperature Oscillation in Si/Si_Ge_x Resonant Tunneling Diode
• SiOx/3C-SiC/Si Metal--Insulator--Semiconductor Nonvolatile Resistance Memory
• Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers
• High-PVCR Si/Si_Ge_x Planer-Type Resonant Tunneling Diode Formed with Phosphorous doped Quadruple-layer Buffer
• Strain-Relief Mechanisms of Stepwise Ge composition Multilayer Buffers and High PVCR Si/Si_Ge_x ASDQW RTD Formed with Triple-Layer Buffer
• Analysis of Oxidation State of Multilayered Catalyst Thin Films for Carbon Nanotube Growth Using Plasma-Enhanced Chemical Vapor Deposition
• Oxide Structure Dependence of SiO2/SiOx/3C-SiC/n-Type Si Nonvolatile Resistive Memory on Memory Operation Characteristics
• Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
• Al2O3/3C-SiC/n-Si Nonvolatile Resistance Memory
• Hydrogen-Sensing Response of Carbon-Nanotube Thin-Film Sensor with Pd Comb-Like Electrodes
• Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
• Strain-Relieving Mechanisms of Thin Double- and Triple-Layer Buffers

もっと見る 閉じる

スポンサーリンク