Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
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概要
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We have demonstrated Si/Ge hole-tunneling double-barrier resonant tunneling diodes (RTDs) formed on flat Ge layers with a relaxation rate of 89% by our proposed method; in this method, the flat Ge layers can be directly formed on highly B-doped Si(001) substrates using our proposed sputter epitaxy method. The RTDs exhibit clear negative differential resistance effects in the static current--voltage ($I$--$V$) curves at room temperature. The quantized energy level estimation suggests that resonance peaks that appeared in the $I$--$V$ curves are attributed to hole tunneling through the first heavy- and light-hole energy levels.
- 2011-02-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Hanafusa Hiroaki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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KASAMATSU Akifumi
National Inst. of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Chong Harold
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Mimura Takashi
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Hirose Nobumitsu
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Kasamatsu Akifumi
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Hanafusa Hiroaki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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