30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
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概要
- 論文の詳細を見る
We fabricated Al0.4Ga0.6N(8 nm)/GaN heterostructure field-effect transistors (HFETs) with a gate length ($L_{\text{G}}$) of 30 nm on a sapphire substrate. The AlGaN/GaN HFETs, which had a 2-nm-thick SiN passivation and gate-insulating layer formed by catalytic chemical vapor deposition, showed a maximum drain current density of 1.49 A/mm, a peak extrinsic transconductance of 402 mS/mm, a current-gain cutoff frequency ($ f_{\text{T}}$) of 181 GHz, and a maximum oscillation frequency of 186 GHz. From a delay time analysis of $ f_{\text{T}}$ for the HFETs with $L_{\text{G}}=30--150$ nm, the electron velocity overshoot was not observed even when $L_{\text{G}}$ was decreased to 30 nm.
- Japan Society of Applied Physicsの論文
- 2006-11-25
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Higashiwaki M
National Institute Of Information And Communications Technology
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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