High Electron Mobility Transistor Logic

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1981-08-05

著者

• Hiyamizu Satoshi

  Fujitsu Limited

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• MIMURA Takashi

  Fujitsu Laboratories Lid.

• Hikosaka K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• HIKOSAKA Kohki

  Fujitsu Laboratories Ltd.

• Matsui Toshiaki

  Communications Research Laboratory Ministry Of Posts And Telecommunications

• Abe Masayuki

  Fujitsu Laboratories Ltd.

• Abe Masayuki

  Fujitsu Laboratories Limited

• JOSHIN Kazukiyo

  Fujitsu Laboratories Ltd.

• Mimura Takashi

  National Institute Of Information And Communications Technology (nict)

• Matsui Toshiaki

  National Institute Of Information And Communications Technology (nict)

関連論文

• A New Functional, Resonant-Tunneling Hot Electron Transistor (RHET)
• Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
• The Effects of Tungsten-Halogen Lamp Annealing on a Selectively Doped GaAs/N-AlGaAs Heterostructure Grown by MBE
• Structure Analysis of GaAs-AlAs Superlattice Grown by Molecular Beam Epitaxy
• Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
• Reply to the Comment by H.L. Stormer
• The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Magnetoconductance Investigations of Al_xGa_As/GaAs Heterojunction FET in Strong Magnetic Fields
• Galvanomagnetic Study of 2-Dimensional Electron Gas in Al_xGa_As/GaAs Heterojunction FET
• Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures
• Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
• Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
• Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
• Improved Electron Mobility Higher than 10^6 cm^2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
• Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
• Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
• Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
• Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
• Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
• Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
• AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
• Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
• High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
• DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
• Millimeter Wave Antennas with Gaussian Radiation Patterns(Special Issue on Innovation in Antennas and Propagation for Expanding Radio Systems)
• Realization of Highly Resistive GaAs/Si Interface and Improvement of RF Performance for High Electron-Mobility Transistors Grown on Si Substrates
• 100-GHz Ultra-Broadband Distributed Amplifier in Chip-Size Package(Microwaves, Millimeter-Waves)
• Low-Power, High-Speed Integrated Logic with GaAs MOSFET : B-1: GaAs IC
• A New Type GaAlAs Monolithic Lensed LED : B-2: GaAs FET/LED AND DETECTOR
• Modeling Thermal Effects for Simulation of Post Exposure Baking (PEB) Process in Positive Photoresist
• High Electron Mobility Transistor Logic
• Monte Carlo Simulation of Gunn Domain Formations
• 1.5 V Low-Voltage Microwave Power Performance of InAlAs/InGaAs Double Heterojunction Bipolar Transistors
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• CMOS-based Power Amplifiers Operating at Quasi-Millimeter and Millimeter Waveband
• InGaP-Channel Field Effect Transistors with High Breakdown Voltage (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• InGaP Channel FET with High Breakdown Voltage
• A Low Distortion pHEMT with Newly Developed Composite Channel Structure
• Highly-Reliable GaN HEMT Transmitter Amplifier with Output Power of Over 200W for Wireless Base Station
• Selective Dry Etching of AlGaAs-GaAs Heterojunction
• Enhancement-Mode High Electron Mobility Transistors for Logic Applications
• A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
• Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
• Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
• A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
• Hyperon Nonleptonic Decays Revisited
• Monolithic 1×4 Array of Uniform Radiance AlGaAs-GaAs LED's Grown by Molecular Beam Epitaxy
• 0.1μm-Gate InGaP/InGaAs HEMT Technology for Millimeter Wave Applications(Special Issue on Microwave and Millimeter-Wave Module Technology)
• Parallel Electron Transport and Field Effects of Electron Distributions in Selectively-Doped GaAs/n-AlGaAs
• The Mass Levels of Q^2 ^2 States in (3+1) Dimensional Lattice Gauge Theory
• Monte Carlo Simulations of Electron Transport in In0.52Al0.48As/In0.75Ga0.25As High Electron Mobility Transistors at 300 and 16 K
• Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
• Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
• Coherency Dependence of Projection Printing Method Using a Phase-Shifting Mask
• E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
• Effect of Gate–Drain Spacing for In0.52Al0.48As/In0.53Ga0.47As High Electron Mobility Transistors Studied by Monte Carlo Simulations
• FDTD Analysis and Experiment of Fabry-Perot Cavities at 60GHz (Special Issue on Microwave and Millimeter Wave Technology)
• Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
• AlGaN/GaN Heterostructure Field-Effect Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190 GHz
• Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
• 30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz
• Dielectric Measurements in the 60-GHz Band Using a High-Q Gaussian Beam Open Resonator
• HEMT : Looking Back at Its Successful Commercialization(Heterostructure Microelectronics with TWHM2003)
• Effect of gate-recess structure on electron transport in InP-based high electron mobility transistors studied by Monte Carlo simulations
• InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method
• High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
• InP-Based High Electron Mobility Transistors with a Very Short Gate-Channel Distance
• Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
• Development of High Electron Mobility Transistor
• Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
• A New Field-Effect Transistor with Selectively Doped GaAs/n-Al_xGa_As Heterojunctions

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