Development of High-Frequency GaN HFETs for Millimeter-Wave Applications
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概要
- 論文の詳細を見る
This paper describes the device fabrication process and characteristics of AlGaN/GaN heterostructure field-effect transistors (HFETs) aimed for millimeter-wave applications. We developed three novel techniques to suppress short-channel effects and thereby enhance high-frequency device characteristics: high-Al-composition and thin AlGaN barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub-100-nm Ti-based gates. The Al0.4Ga0.6N/GaN HFETs with a gate length of 30nm had a maximum drain current density of 1.6A/mm and a maximum transconductance of 402mS/mm. The use of these techniques led to a current-gain cutoff frequency of 181GHz and a maximum oscillation frequency of 186GHz.
- （社）電子情報通信学会の論文
- 2008-07-01
著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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Higashiwaki M
National Institute Of Information And Communications Technology
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HIGASHIWAKI Masataka
National Institute of Information and Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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