High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier

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概要

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• We fabricated 60-nm-long-gate AlGaN/GaN heterostructure field-effect transistors (HFETs) with an AlGaN back-barrier structure and investigated the high frequency device characteristics and three-terminal off-state breakdown characteristics as a function of the source-to-drain distance. These devices, with source-to-drain distances of 2 to 5 μm, showed very high current-gain cutoff frequencies of more than 118 GHz. The off-state breakdown characteristics were largely dependent on the source-to-drain distance compared to the high frequency device characteristics, and the devices with source-to-drain distances of 4 and 5 μm exhibited very high off-state breakdown voltages of more than 110 V while keeping very high cutoff frequencies. These good breakdown characteristics might be the result of the double-barrier structure (i.e., AlGaN/GaN/AlGaN), which prevents electron spillover to the AlGaN back-barrier at high power conditions.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-09-25

著者

• MATSUI Toshiaki

  National Institute of Info. & Com. Tech.

• Hirose Nobumitsu

  National Inst. Of Information And Communications Technology

• MIMURA Takashi

  National Institute of Information and Communications Technology

• Mimura Takashi

  National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan

• Onojima Norio

  National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan

• ONOJIMA Norio

  National Institute of Information and Communications Technology (NICT)

• Matsui Toshiaki

  National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan

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