Hirose Nobumitsu | National Inst. Of Information And Communications Technology
スポンサーリンク
概要
関連著者
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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MIMURA Takashi
National Institute of Information and Communications Technology
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Hanafusa Hiroaki
Graduate School Of Engineering Tokyo University Of Agriculture And Technology
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Suda Yoshiyuki
Graduate School Of Engineering Hokkaido University
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KASAMATSU Akifumi
National Inst. of Information and Communications Technology
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ENDOH Akira
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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MIMURA Takashi
Fujitsu Laboratories Lid.
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu S
Osaka Univ. Osaka Jpn
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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HIROSE Nobumitsu
National Institute of Information and Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Chong Harold
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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Mizuta Hiroshi
School of Electronic and Computer Science, University of Southampton, Highfield, Southampton SO17 1BJ, U.K.
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ONOJIMA Norio
National Institute of Information and Communications Technology (NICT)
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Suda Yoshiyuki
Tokyo Univ. Agriculture And Technol. Tokyo Jpn
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Mimura T
National Institute Of Information And Communications Technology
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Matsui Toshiaki
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Mimura Takashi
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Mimura Takashi
National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan
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Mimura Takashi
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Onojima Norio
National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan
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Endoh Akira
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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Hirose Nobumitsu
National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
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Hirose Nobumitsu
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Kasamatsu Akifumi
National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795, Japan
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Kasamatsu Akifumi
National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795, Japan
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Hanafusa Hiroaki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan
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Hanafusa Hiroaki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
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Matsui Toshiaki
National Institute of Information and Communications Technology (NICT), Koganei, Tokyo 184-8795, Japan
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Suda Yoshiyuki
Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
著作論文
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy
- Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers
- Strain-Relaxed Si_Ge_x and Strained Si Grown by Sputter Epitaxy
- Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy
- High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
- High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
- Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Using SiN/SiO2/SiN Triple-Layer Insulators
- Effects of Si Deposition on AlGaN Barrier Surfaces in GaN Heterostructure Field-Effect Transistors