HIYAMIZU Satoshi | Graduate School of Engineering Science, Osaka University
スポンサーリンク
概要
関連著者
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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Hiyamizu Satoshi
Fujitsu Limited
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Hiyamizu S
Osaka Univ. Osaka Jpn
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Ishikawa T
Riken Harima Institute
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Shimomura S
Graduate School Of Science And Engineering Ehime University
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Shimomura Satoshi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Sasa S
Fujitsu Laboratories Ltd.
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Sasa Shigehiko
Nanomaterials Microdevices Research Center Osaka Institute Of Technology
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Muto S
Kek Ibaraki
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Endoh Akira
National Inst. Of Information And Communications Technol. (nict) Koganei‐shi Jpn
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Yamashita Yoshimi
Fujitsu Laboratories Ltd.
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Hiyamizu Satoshi
Graduate School Of Engineering Science Osaka University
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ENDOH Akira
Fujitsu Laboratories Ltd.
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Endoh A
Fujitsu Lab. Ltd. Atsugi Jpn
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MIMURA Takashi
Fujitsu Laboratories Lid.
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HIKOSAKA Kohki
Fujitsu Laboratories Ltd.
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Matsui Toshiaki
Communications Research Laboratory Ministry Of Posts And Telecommunications
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Ishikawa Takatoshi
Department Of Applied Physics Faculty Of Science Fukuoka University
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Mimura Takashi
National Institute Of Information And Communications Technology (nict)
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Matsui Toshiaki
National Institute Of Information And Communications Technology (nict)
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Hikosaka K
Fujitsu Lab. Ltd. Kanagawa Jpn
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Fujii Toshio
Fujitsu Laboratories Lid.
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KITADA Takahiro
Osaka University
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Ishikawa Tomonori
Fujitsu Limited
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Ishikawa Tomonori
Fujitsu Laboratories Limited
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Nakata Yoshiaki
Fujitsu Laboratories Limited
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Kitada Tadayoshi
Institute Of Technology And Science University Of Tokushima
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Yamashita Yoshimi
Fujitsu Laboratories Limited, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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Sano Naokatsu
Faculty Of Science Kwansei-gakuin University
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Sano Naokatsu
Department Of Physics School Of Science Kwansei Gakuin University
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Sano Naokatsu
School Of Science Kwansei Gakuin University
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SANO Naoki
Sony Research Center
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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KONDO Kazuhiro
Fujitsu Limited
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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Kondo K
Fujitsu Laboratories Ltd.
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Higashiwaki M
National Institute Of Information And Communications Technology
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MATSUI Toshiaki
Communication Research Laborator
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Adachi Akira
R&d Division Nissin Electric Co. Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Sano Naokatsu
Faculty Of Engineering Science Osaka University
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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Saito Junji
Fujitsu Laboratories Ltd.
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Adachi A
Advanced Materials Laboratory Japan Chemical Innovation Institute
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SHIMOMURA Satoshi
Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
Faculty of Engineering Science, Osaka University
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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Okamoto Yasunori
Research And Headquarters Kubota Corporation
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Shinohara K
National Institute Of Info. & Com. Tech.
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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OKAMOTO Yasunori
Research and Headquarters, Kubota Corporation
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SHIMOMURA Satoshi
Faculty of Engineering Science, Osaka University
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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ISHIKAWA Hideaki
Fujitsu Laboratories Ltd.
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Ishikawa T
Fujitsu Laboratories Ltd.
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KITADA Takahiro
Graduate School of Engineering Science, Osaka University
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Nanbu K
Fujitsu Laboratories Ltd.
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HIGASHIWAKI Masataka
Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
Department of Materials Physics,Faculty of Engineering Science,Osaka University
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Ohnishi Hiroaki
Fujitsu Laboratories Ltd.
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MATSUI Toshiaki
National Institute of Info. & Com. Tech.
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Nakata Yoshinori
Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute
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Nakata Y
Fujitsu Laboratories Ltd.
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Ohnishi H
Taihei Kogyo Co. Ltd. Himeji Jpn
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Saeki Tatsuya
Graduate School Of Engineering Science Osaka University
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Ohnishi Hiroaki
Division Of Hematology Faculty Of Medicine Kagawa University
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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山本 雅彦
阪大工
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Yamamoto Masanobu
Sony Corp. Tokyo Jpn
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Sugiyama Y
Jst‐crest Ibaraki Jpn
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Yamamoto M
Ntt System Electrics Lab. Kanagawa Jpn
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SAEKI Tatsuya
Faculty of Engineering Science, Osaka University
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MOTOKAWA Takeharu
Faculty of Engineering Science, Osaka University
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KITADA Takahiro
Faculty of Engineering Science, Osaka University
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ADACHI Akira
Research Development Division, Nissin Electric Co. Ltd.
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ADACHI Akira
Nissin Electric Co. Ltd.
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MURASE Kazuo
Faculty of Science, Osaka University
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Ohashi M
Tohoku Univ. Sendai Jpn
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Nishi Hidetoshi
Fujitsu Limited
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Murase Kazuo
Faculty Of Science Osaka University
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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HIROSE Nobumitsu
National Institute of Information and Communications Technology
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HIGASHIWAKI Masataka
Communications Research Laboratory
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Shinohara Keisuke
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Murase K
Nagoya Inst. Technol. Nagoya Jpn
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MURASE Kouki
Department of Electrical Engineering, Osaka University
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Nishi Hidetoshi
Fujitsu Laboratories Limited
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Hirose Nobumitsu
National Inst. Of Information And Communications Technology
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Murase Kouki
Department Of Electrical Engineering Osaka University
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Motokawa Takeharu
Faculty Of Engineering Science Osaka University
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OHASHI Masanobu
Graduate School of Engineering Science, Osaka University
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SHINOHARA Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Sciences
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Shinohara Keisuke
Department of Cardiovascular Medicine, Kyushu University Graduate School of Medical Science
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OHSHIMA Toshio
Fujitsu Laboratories Ltd.
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IMAMURA Kenichi
Fujitsu Laboratories Ltd.
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Imamura K
Fujitsu Lab. Ltd. Kanagawa Jpn
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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Hashimoto Hisao
Fujitsu Limited
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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OHSHIMA Takeshi
Japan Atomic Energy Research Institute
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Wakejima Akio
Faculty Of Engineering Science Osaka University
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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YAMAMOTO Masanori
Graduate School of Engineering Science, Osaka University
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SIMOMURA Satoshi
Faculty of Engineering Science, Osaka University
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ADACHI Akira
R&D Division Nissin Electric Co., Ltd.
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HIGASHIWAKI Masataka
Faculty of Engineering Science, Osaka University
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YAMAMOTO Masanori
Faculty of Engineering Science, Osaka University
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HIGUCHI Takahiro
Faculty of Science, Kwansei-Gakuin University
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SANO Naokatsu
Nissin Electric Co. Ltd.
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LIU Yi
Faculty of Engineering Science, Osaka University
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NISHIMOTO Yoshinori
Faculty of Engineering Science, Osaka University
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GAMO Kenji
Faculty of Engineering Science, Osaka University
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KANAMOTO Kyozo
Mitsubishi Electric Co., Ltd.,
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ISU Toshiro
Mitsubishi Electric Co., Ltd.,
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FUJITA Katsuhisa
ATR Optical and Radio Communication Research Laboratory
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WATANABE Toshihide
ATR Optical and Radio Communication Research Laboratory
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Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Fujimoto Hiroki
Department Of Chemistry Faculty Of Science Kyoto University
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Gamo Kenji
Faculty Of Engineering Science And Research Center For Extreme Materials Osaka University
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Ikeda Keiji
Fujitsu Laboratories Ltd.
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Nishimoto Yoshinori
Faculty Of Engineering Science Osaka University
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Isu Toshiro
Mitsubishi Electric Co. Ltd.
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FUJIMOTO Hidetoshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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IMANISHI Kenji
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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NALAZAWA Takeshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
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SHIMIZU Yasuyuki
Department of Oral and Maxillofacial Radiology, School of Dentistry, Aichi-Gakuin University
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INADA Tsuguo
Fujitsu Laboratories Limited
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SASA Sigehiko
Fujitsu Laboratories Limited
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ANDO Hideyasu
Fujitsu Laboratories Ltd.
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WATANABE Issei
National Institute of Info. & Com. Tech.
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SHINOHARA Keisuke
National Institute of Info. & Com. Tech.
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SHIMOMURA Satoshi
Osaka University
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HIYAMIZU Satoshi
Osaka University
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SHINOHARA Keisuke
Graduate School of Engineering Science, Osaka University
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YAMASHITA Yoshimi
Communications Research Laboratory
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ENDOH Akira
Communications Research Laboratory
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HIKOSAKA Kohki
Communications Research Laboratory
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MATSUI Toshiaki
Graduate School of Engineering Science, Osaka University
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MIMURA Takashi
Communications Research Laboratory
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SHINOHARA Keisuke
Communications Research Laboratory
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HIGASHIWAKI Masataka
the Graduate School of Engineering Science, Osaka University
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HIYAMIZU Satoshi
the Graduate School of Engineering Science, Osaka University
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AOKI Toyohiro
Graduate School of Engineering Science, Osaka University
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Imamura Kimitake
Faculty Of Engineering Yokohama National University
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Higuchi Takahiro
Faculty Of Science Kwansei-gakuin University
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Fujimoto Hidetoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Shimizu Yasuyuki
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Shimizu Yasuyuki
Department Of Civil Engineering Hokkaido University
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Liu Yi
School Of Electrical And Electronic Engineering Nanyang Technological University
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Aoki Toyohiro
Graduate School Of Engineering Science Osaka University
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Imanishi Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Ohshima T
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Nakazawa T
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Hashimoto Hisao
Fujitsu Laboratories Limited
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Kanamoto Kyozo
Mitsubishi Electric Co. Ltd.
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Nishi H
Fujitsu Limited
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Watanabe Issei
National Institute Of Information And Communications Technology (nict)
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Mimura T
National Institute Of Information And Communications Technology
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Ohno Yasuhide
Graduate School Of Engineering Science Osaka University
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Nakazawa Takeshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
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Liu Yi
Faculty Of Engineering Science Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Fujimoto Hidetoshi
Department of Chemistry, Faculty of Science, Kyoto University
著作論文
- Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in In_xGa_As/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrates by MBE
- High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Highly Uniform GaAs/AIAs Quantum Wires Grown on [001] Ridges of GaAs(100) Patterned Substrates by Molecular Beam Epitaxy
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
- Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
- MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Effect of flatness of heterointerfaces on device performance of InP-based HEMTs
- Effect of Bottom SiN Thickness for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors Using SiN/SiO_2/SiN Triple-Layer Insulators
- AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO_2/SiN Triple-Layer Insulators
- Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
- Extremely High-Speed Lattice-Matched InGaAs/InAlAs High Electron Mobility Transistors with 472 GHz Cutoff Frequency
- Fabrication Technology and Device Performance of Sub-50-nm-Gate InP-Based High Electron Mobility Transistors
- High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High f_T 50-nm-Gate InAlAs/InGaAs High Electron Mobility Transistors Lattice-Matched to InP Substrates
- DC and RF Performance of 50 nm Gate Pseudomorphic In_Ga_As/In_Al_As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
- Recovery of (411)A Superflat Interfaces in GaAs/Al_Ga_As Quantum Wells Grown on (411)A GaAs Substrate by Molecular Beam Epitaxy
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- Back-Gated Field Effect in a Double Two-Dimensional Electron Gas Structure
- Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- High-Quality InGaAs Layers Grown on (411)A-Oriented InP Substrates by Molecular Beam Epitaxy
- Super-Flat Interfaces in Pseudomorphic In_xGa_As/Al_Ga_As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy
- Large Anisotropy of Electron Mobilities in Laterally Modulated Two-Dimensional Systems Grown on the (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy(Structure, Interfaces, and Films)
- Sharp Transmission Coefficient in GaAs/AlAs Resonant Tunneling Diodes with (411) A Superflat Interfaces Grown by Molecular Beam Epitaxy
- InGaAlAs /InGaAs and InAlAs/InGaAlAs Quantum-Well Structures Grown by MBE Using Pulsed Molecular Beam Method