Hamaguchi Chihiro | Department Of Electronic Engineering Faculty Of Engineering Osaka University
スポンサーリンク
概要
関連著者
-
Hamaguchi Chihiro
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
-
Hamaguchi C
Osaka Univ. Osaka Jpn
-
Taniguchi K
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
YAMADA Masayoshi
Department of Electronics,Faculty of Engineering,Kobe University
-
安田 直彦
岐阜大工
-
Yasuda Naoki
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Department Of Electronics Osaka University
-
Hamaguchi C
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Hamaguchi Chihiro
Department Of Electronics Faculty Of Engineering Osaka University
-
Sasaki Yoshiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
-
ITOH Yasuo
Department of Electronics,Osaka University
-
Itoh Yasuo
Department Of Electronics Osaka University
-
HARAGUCHI Masanobu
Department of Optical Science and Technology, Faculty of Engineering, The University of Tokushima
-
Haraguchi Masaru
Department Of Electrical And Electronics Engineering Sophia University
-
Hazama H
Niigata Univ. Niigata Jpn
-
Hazama H
Toshiba Corp. Kawasaki‐shi Jpn
-
Kubo Hitoshi
Department Of Orthopaedic Surgery Kakogawa National Hospital
-
HAZAMA Hiroaki
Department of Electronics,Osaka University
-
Kubo Hitoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
RYZHII Maxim
Computational Nanoelectronics Laboratory, University of Aizu
-
RYZHII Victor
Computational Nanoelectronics Laboratory, University of Aizu
-
Adachi Sadao
Department Of Electronics Osaka University
-
Adachi Sadao
Department Of Electronic Engineering Gunma University
-
Ryzhii M
Computational Nanoelectronics Laboratory University Of Aizu
-
Quazi Deen
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Ryzhii V
Univ. Aizu Aizu-wakamatsu Jpn
-
Ryzhii Victor
Computational Nanoelectronics Laboratory University Of Aizu
-
Ryzhii V
Univ. Aizu Fukushima
-
YAMAGUCHI Masahito
Department of Electronics, School of Engineering, Nagoya University, Chikusa-ku, Nagoya
-
Hamaguchi Chihiro
Department Of Electronic Engineering Osaka University
-
Matsuoka Toshimasa
Department Of Electronic Engineering Osaka University
-
Kubo H
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
SURIS Robert
A.F.Ioffe Physical-Technical Institute
-
Taniguchi Kenji
Department Of Electronic Engineering Osaka University
-
SUGIMASA Tetsuya
Department of Electronic Engineering, Faculty of Engineering, Osaka University
-
Taniguchi Kenji
Department Of Electronics Osaka University
-
Imachi Tadashi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
NAKAMURA Hiroshi
Department of Analytical Chemistry, Faculty of Pharmaceutical Sciences, Science University of Tokyo
-
Yamamoto Hideaki
Department of Regulation Biology, Faculty of Science, Saitama University
-
Shimizu Masahiro
Ulsi Development Center Mitsubishi Electric Corporation
-
Yamaguchi M
Department Of Physics Yokohama National University
-
Matsumoto T
Institute Of Scientific And Industrial Reserch Univ Of Osaka
-
Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd
-
Ueda D
Matsushita Electronics Corp. Takatsuki‐shi Jpn
-
INUISHI Masahide
ULSI Laboratory, Mitsubishi Electric Corporation
-
Arima H
Mitsubishi Electric Corp. Hyogo Jpn
-
Arima Hideaki
Lsi Research And Development Laboratory Mitusbishi Electric Corporation
-
Arima Hideaki
Ulsi Development Center Mitsubishi Electric Corp.
-
Ueda D
Department Of Applied Chemistry Graduate School Of Engineering Osaka University
-
INUISHI Masahide
Advanced Device Development Dept., Renesas Technology Corp.
-
TATSUYAMA Chiei
Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University
-
Ozeki Masashi
Fujitsu Laboratories Ltd.
-
Ozeki Masashi
Fujitsu Laboratories
-
ANDO Koshi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Tottori University
-
Ando Koushi
Department of Internal Medicine, Cardiology, Neurosurgery, and Radiology, Hamamatsu Red Cross Hospit
-
Fujimoto Hiroki
Department Of Chemistry Faculty Of Science Kyoto University
-
TAGUCHI Shigenari
Department of Electronic Engineering, Osaka University
-
KAKIMOTO Seizo
Central Research Laboratories, Sharp Corporation
-
UDA Keiichiro
Central Research Laboratories, Sharp Corporation
-
SASA Shigehiko
Fujitsu Laboratories Ltd.
-
Kakimoto S
Mitsubishi Electric Corp. Hyogo Jpn
-
Kakimoto Seizo
Advanced Technology Research Laboratories Sharp Corporation
-
Kakimoto Seizo
Central Research Laboratories Sharp Corporation
-
Shimizu M
Advanced Industrial Science And Technology (aist) Power Electronics Research Center
-
Shimizu Mitsuaki
Power Electronics Research Center National Institute Of Advanced Industrial Science And Technology
-
TANIMOTO Hiroyoshi
Department of Electronics, Faculty of Engineering, Osaka University
-
FUJIMOTO Hidetoshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
-
IMANISHI Kenji
Department of Electronic Engineering,Faculty of Engineering,Osaka University
-
SURIS Robert
A.F. Ioffe Physical-Technical Institute RAS
-
TSUKAHARA Takashi
Department of Orthopedic Surgery, Murakami Memorial Hospital, Asahi University
-
Fukui Masao
Department Of Optical Science And Technology Faculty Of Engineering The University Of Tokushima
-
Morifuji Masato
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Taniguchi Kenji
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Matsumoto Takuya
Institute Of Scientific And Industrial Reserch Univ Of Osaka
-
MIYATSUJI Kazuo
Electronics Research Laboratory, Matsushita Electronics Corporation
-
UEDA Daisuke
Electronics Research Laboratory, Matsushita Electronics Corporation
-
MASAKI Kazuo
Anan College of Technology
-
IMACHI Tadashi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
-
Matsumoto Takuji
Department Of Machine Intelligence And System Engineering Intelligent System Design Laboratory Tohok
-
Fujimoto Hidetoshi
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Tanimoto Hiroyoshi
Department Of Electronics Faculty Of Engineering Osaka University
-
Yamaguchi Masakazu
Research And Development Center Toshiba Corporation
-
Yamaguchi Masafumi
Ntt Ibaraki Electrical Communication Laboratories Nippon Telegraph And Telephone Corporation
-
Yamaguchi Masafumi
Ntt Electrical Communications Laboratories
-
原口 雅宣
徳島大学工学部
-
Fukui Masuo
Department Of Electrical And Electronic Engineering Tokushima University
-
Sasa S
Fujitsu Laboratories Ltd.
-
Ueda Daisuke
Electronics Research Laboratory Matsushita Electronics Corporation
-
Ueda Daisuke
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Ando Koshi
Department Of Electronics Faculty Of Engineering Osaka University
-
Ando Koshi
Department Of Electrical And Electronic Engineering Tottori University
-
Ando Koushi
Department Of Electronics Osaka University
-
Wirner Christoph
Department Of Electronic Engineering Faculty Of Engineering Osaka University
-
Wirner Christoph
Fujitsu Ltd.
-
Sekido M
National Inst. Information And Communications Technol. Ibaraki
-
MUTO Shunichi
Fujitsu Laboratories Ltd.
-
NISHIKAWA Yuji
Fujitsu Laboratories Ltd.
-
MIURA Noboru
Institute for Solid State Physics,University of Tokyo
-
鎌田 憲彦
埼玉大 工
-
Masaki K
Anan Coll. Technology Tokushima
-
NISHIMURA Tadashi
ULSI Laboratory, Mitsubishi Electric Corporation
-
SHIBATOMI Akihiro
Fujitsu Limited
-
UENO Shuichi
Department of Communication and Integrated Systems, Tokyo Institute of Technology
-
Toriumi Akira
Ulsi Research Laboratories Toshiba Corporation
-
Toriumi Akira
Ulsi Research Center Toshiba Corporation
-
KISHIDA Satoru
Department of Electronics, Faculty of Engineering, Tottori University
-
FUJII Toshio
Fujitsu Laboratories Ltd.
-
HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
-
KUROI Takashi
ULSI Development Center, Mitsubishi Electric Corporation
-
TERAMOTO Akinobu
ULSI Development Center, Mitsubishi Electric Corporation
-
SEKIYA Hideki
Department of Oral Surgery, Toho University, Omori Medical Center
-
INUISHI Yoshio
Department of Electrical Engineering, Faculty of Engineering, Osaka University
-
Hamamoto K
Univ. Tokyo Tokyo Jpn
-
ISHIDA AKIRA
Department of Urology, Biwako Ohashi Hospital
-
Hamaguchi Chihiro
Fuculty Of Engineering Osaka University
-
YAMADA Koji
Faculty of Engineering, Saitama University
-
KHMYROVA Irina
Computer Solid State Physics Laboratory, University of Aizu
-
KOBAYASHI Eisuke
Department of Electronics, Faculty of Engineering, Osaka University
-
YAMAGUCHI Yasuo
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
-
NISHIMURA Tadashi
LSI Research and Development Laboratory, Mitsubishi Electric Corporation
-
Yamaguchi Y
Inst. Fundamental Chemistry Kyoto Jpn
-
TOMITA HIROSHI
Department of Ophthalmology, Tohoku University, School of Medicine
-
HASHIMOTO Kazuhiko
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
Hiyamizu S
Osaka Univ. Osaka Jpn
-
Kishida Satoru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
-
Kishida Satoru
Department Of Electronics Faculty Of Engineering Tottori University
-
Miura Noboru
Instilute For Solid State Physics University Of Tokyo
-
QUAZI Deem
Department of Electronic Engineering, Faculty of Engineering, Osaka University
-
TOYOSHIMA Yoshiaki
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
MARUYAMA Akinori
Department of Electronic Engineering, Osaka University
-
KAKUMU Masakazu
Semiconductor Device Engineering Laboratory, Toshiba Corporation
-
LASSERRE Jean
Department of Electronics, Faculty of Engineering, Osaka University
-
Ueno Hiroaki
Department Of Electronic & Electrical Engineering Kanagawa Institute Of Technology
-
Lasserre Jean
Department Of Electronics Faculty Of Engineering Osaka University
-
Kakumu Masakazu
Semiconductor Device Engineering Laboratory Toshiba Corporation
-
NAKAZAWA Takeshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
-
NALAZAWA Takeshi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
-
HIYAMIZU Satoshi
Department of Materials Physics,Faculty of Engineering Science,Osaka University
-
BOHM Gerhard
Walter Schottky Institute, Technische Universitat Miinchen
-
MORI TOSHIHIKO
Department of Pediatrics, Otaru Kyokai Hospital
-
NAKASHIMA SHINICHI
Department of Urology, National Kanagawa Hospital
-
KHMYROVA Irina
Comp. Solid State Physics Lab, Univ. of Aizu
-
RYZHII Victor
Department of Computer Hardware, University of Aizu
-
ERSHOV Maxim
Department of Computer Hardware, University of Aizu
-
UCHIDA Tetsuya
ULSI Laboratory, Mitsubishi Electric Corporation
-
EIKYU Katsumi
ULSI Development Center, Mitsubishi Electric Corporation
-
Morifuji M
Osaka Univ. Suita Jpn
-
Tanaka Tsuyoshi
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
KOMENO Junji
Fujitsu Laboratories Ltd.
-
OHTSUKI Osamu
Fujitsu Laboratories Ltd.
-
Fujii Toshio
Fujitsu Laboratories Lid.
-
Fujii Toshio
Fujitsu Laboratories Limited
-
MITSUI Katsuyoshi
ULSI Developtment Center, Mitsubishi Electric Corporation
-
ABE Haruhiko
ULSI Development Center, Mitsubishi Electric Corporation
-
Teramoto Akinobu
Ulsi Development Center Mitsubishi Electric Corporation
-
Teramoto Akinobu
Ulsi Laboratory Mitsubishi Electric Corporation
-
Teramoto Akinobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
Ishida Hidetoshi
Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd
-
ISHIDA Hidetoshi
Electronics Research Laboratory, Matsushita Electronics Corporation
-
TANAKA Tsuyoshi
Electronics Research Laboratory, Matsushita Electronics Corporation
-
YAMAKAWA Shinya
Department of Electronic Engineering, Osaka University
-
IWASE Masao
ULSI Research Center, Toshiba Corporation
-
YAMASAKI Takeshi
Department of Electronic Engineering, Faculty of Engineering, Osaka University
-
IMACHI Tadasi
Department of Electronic Engineering,Faculty of Engineering,Osaka University
-
Maruyama Akinori
Department Of Electronic Engineering Osaka University
-
Yamamoto Hideaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Nishimura Tadashi
The Ulsi Development Center Mitsubishi Electric Corporation
-
Nishimura Tadashi
Lsi Research & Development Laboratory Mitsubishi Electric Corporation
-
Nishimura Tadashi
Ulsi Research And Development Center Mitsubishi Electric Corporation
-
Terahara Takafumi
The Authors Are With Optoelectronic Systems Laboratory Network System Laboratories Fujitsu Laborator
-
Shibatomi Akihiro
Fujitsu Laboratories Ltd.
-
Shibatomi Akihiro
Fujitsu Laboratories Limited
-
Yamashita Tomohiro
Ulsi Development Center Mitsubishi Electric Corporation
-
Yamashita Tomohiro
Ulsi Research And Development Center Mitsubishi Electric Corporation
-
Toyoshima Yasutake
Electrotechnical Labotatory
-
Toyoshima Yoshiaki
Semiconductor Device Engineering Laboratory Toshiba Corporation
-
Yongwattanasoontorn Pornchai
Department Of Electronics Faculty Of Engineering Osaka University
-
Iwase Masao
Ulsi Research Center Toshiba Corporation
-
Tomita Hiroshi
Department Of Electrical Engineering Faculty Of Engineering Nagoya University:(present Address)canon
-
Mitsui Katsuyoshi
Ulsi Developtment Center Mitsubishi Electric Corporation
-
TSUKUDA Eiji
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
FUJINAGA Masato
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
KUNIKIYO Tatsuya
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
ISHIKAWA Kiyoshi
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
KOTANl Norihiko
ULSI Research and Development Center, Mitsubishi Electric Corporation
-
KAWAZU Satoru
Department of Electronics and Photonic Systems Engineering, Kochi University of Technology
-
Abe Haruhiko
Ulsi Development Center Mitsubishi Electric Corporation
-
Ryzhii Victor
Department Of Computer Hardware University Of Aizu
-
Yamaguchi Yasuo
Lsi Research And Development Laboratory Mitsubishi Electric Corporation
-
Tanaka T
Semiconductor Device Research Center Semiconductor Company Matsushita Electric Industrial Co. Ltd.
-
Fujii T
Central Research Institute Of Electric Power Industry
-
Ishikawa K
Mitsubishi Electric Corp. Itami‐shi Jpn
-
Jung Hak
Department Of Electronic Engineering Osaka University:department Of Electronic Engineering Kunsan Na
-
Trankle Gunter
Walter Schottky Institut Technische Universitat Munchen
-
Weimann Gunter
Walter Schottky Institut Technische Universitat Munchen
-
Ueda Yoichi
Fujitsu Laboratories
-
Ueda Yoichi
Fujitsu Labolatories Ltd.
-
Sato Mayumi
Mizusawa Vlbi Observatory National Astronomical Observatory
著作論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
- Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
- Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
- Shubnikov de Haas Effect and Energy Band Structure of GaSb
- A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
- High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
- Temperature Dependence of the Effective Masses in III-V Semiconductors
- Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
- Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
- Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Hot Electron Effect in Short n^+nn^ GaAs
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- High-Sensitivity SOI MOS Photodetector with Self-Amplification
- High Sensitivity Photodetector with Self-Amplification Capability
- Wannier-Stark Localization in Superlattices
- Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
- Photoluminescence Measurement in GaAs with High Spatial Resolution
- Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
- Brillouin Scattering in GaP
- Addendum to Brillouin Scattering in GaSe
- Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
- Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
- Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
- Magnetoacoustoelectric Instability in Epitaxial GaAs
- Harmonic Conversion of Acoustoelectrically Amplified Phonons in Photoconductive CdS Revealed by Brillouin Scattering
- Correlations of Acoustoelectric Instabilities with Inhomogeneities in CdS Measured by Optical Probe
- Magneto-Impurity Resonance in n-Type Germanium
- Magnetophonon Resonance in n-Type Germanium at Low Temperatures
- Magnetophonon Effect in p-InSb
- Magnetophonon Resonance and Fourier Analysis in n-GaAs
- Phonon-Assisted Tunneling in Metal-Oxide-Pb_Sn_xTe Junctions
- Magnetophonon Resonance of Hot Electrons in n-InSb at 77K
- Electroreflectance for the Λ_3-Λ_1 Transitions in HgSe
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Resonant Brillouin Scattering in Opaque and Transparent Regions of CdS
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
- Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
- Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
- The Role of the Effective Mass in the Hot-Electron Magnetophonon Resonance in n-Type Germanium
- Effect of Electric Field on the Magnetophonon Oscillations in n-InSb and n-GaAs
- Temperature Dependence of the Band-Edge Effective Mass in n-InAs Deduced from Magnetophonon Resonance
- Measurements of Intervalley Phonons in n-Si by Magnetphonon Resonance : Physical Acoustics
- Magnetophonon Resonance in n-Type Germanium
- Measurements of Band-Edge and Intervalley Phonons in Semiconductors by Magnetophonon Resonance : Physical Acoustics
- Conductance through Laterally Coupled Quantum Dots
- Effect of Quantum Confinement and Lattice Relaxation on Electronic States in GaAs/In_Ga_As/GaAs Quantum Dots ( Quantum Dot Structures)
- Electroabsorption and Electroluminescence of GaSe
- Electroreflectance of GaSe. II. : 3.5-4.1 eV Region
- Electroreflectance of GaSe. I. : Around 3.4 eV
- Electric Field Effect on the Imaginary Part of the Dielectric Function in Highly Anisotropic Crystals
- Electrical Conduction and Switching in Amorphous Semiconductors
- Current Saturation Associated with Ultrasonic Amplification in CdS Crystals
- Self-consistent Determination of the Confinement Potential in Various Etched Quantum Wire Structures
- A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
- Device Physics and Modeling of Multiple Quantum Well Infrared Photodetectors
- Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
- Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
- Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
- Resonant Brillouin Scattering in CdS (Selected Topics in Semiconductor Physics) -- (Light Scattering)
- Study of Resonant Brillouin Scattering in ZnSe by Injected Acoustic Waves
- Effect of Lifetime Broadening on Resonant Brillouin Scattering in ZnTe and ZnSe
- Resonant Brillouin Scattering by LA Phonons in CdS
- A Study of Magnetophonon Effect in n-InSb Using Field Modulation Technique
- Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures