Kakimoto Seizo | Advanced Technology Research Laboratories Sharp Corporation
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概要
関連著者
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Kakimoto Seizo
Advanced Technology Research Laboratories Sharp Corporation
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Kakimoto S
Mitsubishi Electric Corp. Hyogo Jpn
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Sugimoto Kazuo
Advanced Technology Research Laboratories Sharp Corporation
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Kotaki Hiroshi
Advanced Technology Research Laboratories Sharp Corporation
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KAKIMOTO Seizo
Central Research Laboratories, Sharp Corporation
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KOTAKI Hiroshi
Central Research Laboratories, Sharp Corporation
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NAKANO Masayuki
Central Research Laboratories, Sharp Corporation
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Kakimoto Seizo
Central Research Laboratories Sharp Corporation
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NARA MASATO
Shizuoka Prefectural Fisheries Experiment Station
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Nakano M
Advanced Technology Research Laboratories Sharp Corporation
著作論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Novel Low Leakage and Low Resistance Titanium Salicide Technology with Recoil Nitrogen Achieved by Silicidation after Ion Implantation through Contamination-Restrained Oxygen Free LPCVD-Nitride Layer (SICRON)
- Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction
- Novel Ultra-Clean Self Aligned Silicide (Salicide) Technology Using Double Titanium Deposited Silicide (DTD) Process for 0.1μm Gate Electrode
- Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
- Novel Oxygen Free Titaniurm Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
- Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme