Advanced Trench and Local Oxidation of Silicon (LOCOS) Isolation Technology for Ultra-Low-Power Bulk Dynamic Threshold Metal Oxide Semiconductor Field Effect Transistor (B-DTMOS)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-12-30
著者
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KOTAKI Hiroshi
Central Research Laboratories, Sharp Corporation
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NAKANO Masayuki
Central Research Laboratories, Sharp Corporation
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KAKIMOTO Seizou
Central Research Laboratories, Sharp Corporation
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Kakimoto S
Mitsubishi Electric Corp. Hyogo Jpn
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Kakimoto Seizo
Advanced Technology Research Laboratories Sharp Corporation
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NARA MASATO
Shizuoka Prefectural Fisheries Experiment Station
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FUKUSHIMA Takashi
Central Research Laboratories, SHARP Corporation
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Adachi Kazunari
Department Of Electrical And Information Engineering Yamagata University
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Fukushima Takashi
Central Research Laboratories Sharp Corporation
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Nakano M
Advanced Technology Research Laboratories Sharp Corporation
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ADACHI Kouichirou
Central Research Laboratories, Sharp Corporation
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SUGIMOTO Kazuo
Central Research Laboratories, Sharp Corporation
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Sugimoto Kazuo
Advanced Technology Research Laboratories Sharp Corporation
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Kotaki Hiroshi
Advanced Technology Research Laboratories Sharp Corporation
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Adachi K
Department Of Electrical And Information Engineering Faculty Of Engineering Yamagata University
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Nakano M
National Mito Hospital
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Nakano Masayuki
Central Research Laboratories Sharp Corporation
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