Novel Nonvolatile Random-Access Memory with Si Nanocrystals for Ultralow-Power Scheme
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概要
- 論文の詳細を見る
A novel nonvolatile memory with Si nanocrystals has been developed. It has a floating gate consisting of a thin poly Si film and Si nanocrystals. It could be written or erased when a low voltage of +3 V or $-3$ V was supplied to the gate electrode. On the other hand, no hysteresis was observed at +1 V or $-1$ V. These characteristics enable the realization of a random-access memory that operates with extremely low power consumption. In this paper, a memory cell array suitable for novel memory devices is also described. The cell array features well bitline technology and the cell area is reduced to 4 F2 (F: feature size) by winding trench isolation. Applying the novel device to the cell array enables realization of high-density, random-access, nondestructive readout and ultralow-power memories.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Zaima Shigeaki
Center For Cooperative Research In Advanced Science & Technology Nagoya University
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Kakimoto Seizo
Advanced Technology Research Laboratories Sharp Corporation
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Kotaki Hiroshi
Advanced Technology Research Laboratories Sharp Corporation
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SHIBATA Akihide
Advanced Technology Research Laboratories, Sharp Corporation
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OGURA Takayuki
Advanced Technology Research Laboratories, Sharp Corporation
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ARAI Nobutoshi
Advanced Technology Research Laboratories, Sharp Corporation
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ADACHI Kouichiro
Advanced Technology Research Laboratories, Sharp Corporation
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KITO Atsunori
Advanced Technology Research Laboratories, Sharp Corporation
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Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Kito Atsunori
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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Adachi Kouichiro
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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Kotaki Hiroshi
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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Shibata Akihide
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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Arai Nobutoshi
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri, Nara 632-8567, Japan
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