Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO2 Films Using Conductive Atomic Force Microscopy
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概要
- 論文の詳細を見る
We have developed a method of microscopically analyzing the degradation of gate SiO2 films in actual metal-oxide-semiconductor (MOS) devices by conductive atomic force microscopy (C-AFM). In C-AFM images of electrically stressed SiO2 films, leakage current spots on a nanometer scale were successfully observed. The observed current spots show characteristic behaviors similar to the transient stress-induced leakage current which can be detected by macroscopic electrical measurements using MOS capacitors. The appearance of the current spots is discussed on the basis of the mechanism by which holes are trapped and detrapped by stress-induced defects in SiO2 films.
- Japan Society of Applied Physicsの論文
- 2004-02-01
著者
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SEKO Akiyoshi
Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University
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Watanabe Yukihiko
Toyota Central R&d Labs. Inc.
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Kondo Hiroki
Deparment Of Physics Saga University
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Zaima Shigeaki
Center For Cooperative Research In Advanced Science & Technology Nagoya University
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Yasuda Yukio
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Zaima Shigeaki
Center for Cooperative Research in Advanced Science and Technology, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
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