Formation of Pr Oxide Films by Atomic Layer Deposition Using Pr(EtCp)3 Precursor

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概要

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• The formation of Pr oxide films by an atomic layer deposition (ALD) technique using Pr(EtCp)3 and H2O was investigated in this study. The ALD-mode growth of Pr oxide films at a rate of 0.07 nm/cycle and a thickness variation of less than 2% on 3-in. Si wafers was achieved. Transmission electron microscopy (TEM) images and transmission electron diffraction (TED) patterns revealed that polycrystalline cubic Pr2O3 films were grown on Si(001) substrates. On the other hand, epitaxial growth of the cubic Pr2O3 film was clearly observed on a Si(111) substrate. According to X-ray photoelectron spectroscopy (XPS) analyses, the C content of the ALD-Pr oxide film grown at 130 °C is 1.6%. Relatively fine capacitance–voltage curves were observed for the Al/ALD-Pr oxide/Si(001) capacitors. The interface state density between the 130 °C-grown ALD-Pr oxide film and the Si(001) substrate is about $1\times 10^{11}$ cm-2 eV-1. The dielectric constant of the ALD-Pr oxide film grown at 250 °C was determined to be about 18, assuming that the dielectric constant of the interlayers is similar to that of SiO2.

• 2010-04-25

著者

• Matsui Hirotaka

  Department Of Developmental Biology And Molecular Oncology Research Institute For Radiation Biology

• Kondo Hiroki

  Deparment Of Physics Saga University

• Furuta Kazuya

  Department Of Materials Science Faculty Of Science Hiroshima University

• Mitsuo Sakashita

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Shigeaki Zaima

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Hirotaka Matsui

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Kazuya Furuta

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

• Hiroki Kondo

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

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