Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-12-30

著者

• Yasuda Y

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Yasuda Yukio

  Department Of Applied Physics Osaka City University

• KONDO Hiroki

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

• ZAIMA Shigeaki

  Center for Cooperative Research in Advanced Science and Technology, Nagoya University

• Sakurai Masakazu

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• 近藤 博基

  名古屋大学大学院工学研究科

• Kondo H

  Department Of Biochemical Engineering And Science Kyushu Institute Of Technology

• IWANO Hirotaka

  Department of Crystalline Materials Science, School of Engineering, Nagoya University

• BABA Shin-ichi

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

• Kondo Hiroki

  Deparment Of Physics Saga University

• Yasuda Yukio

  Shionogi Research Laboratories Shionogi & Co. Ltd.

• Baba Shin-ichi

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Zaima Shigeaki

  Center For Cooperative Research In Advanced Science & Technology Nagoya University

• IZUMIKAWA Kenta

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

• Izumikawa Kenta

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Baba S

  Osaka Univ. Osaka Jpn

• Yasuda Yukio

  Department Of Applied Physics Faculty Of Engineering Nagoya University

• IWANO Hirotaka

  Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University

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