Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy

スポンサーリンク

概要

• 論文の詳細を見る

• Surface reactions of H_2O-adsorbed Si(100) with atomic hydrogen and oxygen have been examined by high-resolution electron energy loss spectroscopy (HREELS). The surface with saturated coverage of H_2O is terminated by H and OH species and the sticking probability of H_2O is estimated to be 0.9. This surface is stable for the adsorption of molecular oxygen at room temperature. The presence of dissociation sites of oxygen molecules such as dangling bonds is considered to be essential to the oxidation of Si(100) surfaces. By the reaction of H_2O-adsorbed Si(100) with atomic hydrogen, the uptake of oxygen atoms of Si-OH bonds into sites of Si back bonds occurs even at room temperature.

• 社団法人応用物理学会の論文
• 1995-04-30

著者

• Yasuda Y

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Ikeda Hiroya

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Zaima Shigeaki

  Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

• Yamada Tohru

  Department Of Chemistry Faculty Of Science And Technology Keio University

• Hotta K

  Ushio Inc. Tokyo Jpn

• Yasuda Yukio

  Department Of Applied Physics Faculty Of Engineering Nagoya University

• Yamada Tohru

  Department Of Crystalline Materials Science School Of Engineering Nagoya University

• Hotta Koji

  Department of Crystalline Materials Science, School of Engineering, Nagoya University

• Yamada Tohru

  Department Of Chemistry Faculty Of Science An Technology Keio University

• Hotta Koji

  Department of Crystalline Materials Science, School of Engineering, Nagoya University,

関連論文

• Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
• Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Low-Temperature Formation of Epitaxial NiSi_2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
• Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
• HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
• Behavior of Local Current Leakage in Stressed Gate SiO_2 Films Analyzed by Conductive Atomic Force Microscopy
• Detection and Characterization of Stress-Induced Defects in Gate SiO_2 Films by Conductive Atomic Force Microscopy
• Growth of Silicon Nanocrystal Dots with High Number Density by Ultra-High-Vacuum Chemical Vapor Deposition
• Influence of Structural Variation of Ni Silicide Thin Films on Electrical Property for Contact Materials
• Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
• Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO_2-TiO_2 Composite Films
• Microscopic Analysis of Stress-Induced Leakage Current in Stressed Gate SiO_2 Films Using Conductive Atomic Force Microscopy
• Reactive Deposition Epitaxy of CoSi_2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces
• Surface and Interface Smoothing of Epitaxial CoSi_2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
• Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
• Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
• Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
• Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
• Surface Treatment of Ge(001) Surface by Radical Nitridation
• Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
• Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
• Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
• Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
• Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
• Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers : Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface
• Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
• System for simultaneous detection of 16 pathogens related to urethritis to diagnose mixed infection
• Local Leakage Current of HfO_2 Thin Films Characterized by Conducting Atomic Force Microscopy
• B-64. Significance of EEC for Diagnosis of Intracranial tumor
• S-10. Electromyographical Analysis of the Patients with Cervical Cord Lesion
• Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
• Influences of Impurities on Oxidation Processes of Si(100) Substrates
• Influences of Impurities on Oxidation Processes of Si(100) Substrates
• Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
• Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
• Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
• Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
• Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
• Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
• Enantioselective Incorporation of Carbon Dioxide into Epoxides Catalyzed by Optically Active Cobalt(II) Complexes
• Stereoselective α-Hydrazination of α, β-Unsaturated Carboxylates Catalyzed by Manganese(III) Complex with Dialkylazodicarboxylate and Phenylsilane
• Nitrous Oxide Oxidation Catalyzed by Ruthenium Porphyrin Complex
• Stereoselective Preparation of α-Hydroxycarboxamide by Manganese Complex Catalyzed Hydration of α, β-Unsaturated Carboxamide with Molecular Oxygen and Phenylsilane
• Enantioselective CO_2 Fixation Catalyzed by Optically Active Cobalt Complexes
• Highly Enantioselective Cyclopropanation of Styrenes and Diazoacetatel Catalyzed by 3-Oxobutylideneaminatocobalt(II) Complexes, Part 1. Designs of Cobalt Catalysts and the Effects of Donating Ligands
• Highly Enantioselective Cyclopropanation of Styrenes with Diazoacetates Catalyzed by Optically Active β-Ketoiminato Cobalt(II)Complexes
• Optically Active Aldiminato Cobalt(II) Complexes as Efficient Catalysts for Enantioselective Cyclopropanation ofStyrenes with Diazoacetates
• Dynamic Kinetic Resolution with Enantioselective Borohydride Reduction Catalyzed by Optically Active β-Ketoiminato Cobalt(II) Complexes : Highly Diastereo- and Enantioselective Preparation of Optically Active anti-Aldol Compounds
• Enantioselective Borohydride 1,4-Reduction of α,β-Unsaturated Carboxamides Using Optically Active Cobalt (II) Complex Catalysts
• Enantioselective 1, 3-Dipolar Cycloaddition Reaction of Nitrones with α, β-Unsaturated Aldehydes Catalyzed by Cationic 3-Oxobutylideneaminatocobalt(III) Complexes
• Highly Active 3-Oxobutylideneaminatocobalt Complex Catalysts for an Enantioselective Hetero Diels-Alder Reaction
• Titanium Oxycarbide on TiC (100) Surface
• Surgical Intervention in Ruptured Venous Angioma : Case Report
• FT-IR and Theoretical Analysis of the Characteristic Bonding Properties in the Multiplet Metal Porphyrin Carbene Complexes
• Slecective Nitrous Oxide Oxidation for C-H Oxidation and Aromatization of 9,10-Dihydroanthracene Derivatives
• Nitrous Oxide Oxdation of Scondary and Benzylic Alcohols Using Ruthenium Complex Catalyst
• Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
• Highly Enantioselective Cyclopropanation of Styrenes and Diazoacetates Catalyzed by 3-Oxobutylideneaminatocobalt(II) Complexes, Part 2. Semiempirical Analysis of Diastereo and Enantioselectivities
• Nitrous Oxide Oxidation of Olefins Catalyzed by Ruthenium Porphyrin Complexes
• Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
• N_2O Oxidation of Phosphines Catalyzed by Low-Valent Nickel Complexes
• Enantioselective Borohydride Reduction of N-Diphenylphosphinyl Imines Using Optically Active Cobalt(II) Complex Catalysts
• Practical and Efficient Enantioselective Borohydride Reduction of Aromatic Ketones Catalyzed by Optically Active Cobalt(II)Complexes Using Pre-Modified Borohydride
• Enantioselective Borohydride Reduction of Ketones Catalyzed by Optically Active Cobalt(II)Complexes : Achievement of High Enantioselection by Modified Borohydrides with Furfuryl Alcohol Derivatives
• Convenient Method for One-pot Perparation of 1, 2-Diamines form Nitroolefins
• Enantioselective Henry Reaction Catalyzed by Optically Active Ketoiminatocobalt Complexes
• Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure
• B-70. Significances of Angiogram for Diagnosis of Central Tumor
• Atomic-Scale Characterization of Nitridation Processes on Si(100)-$2\times 1$ Surfaces by Radical Nitrogen
• Application of a Two-Step Growth to the Formation of Epitaxial CoSi2 Films on Si(001) Surfaces: Comparative Study using Reactive Deposition Epitaxy
• Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
• Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy
• Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
• Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films
• Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
• Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
• Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation
• Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
• Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures
• Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
• Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
• Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
• Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
• Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
• Characterization of Local Current Leakage in La2O3–Al2O3 Composite Films by Conductive Atomic Force Microscopy
• Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
• Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors
• Microscopic Observation of X-Ray Irradiation Damage in Ultra-Thin SiO2 Films
• Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
• Pulsed Laser Deposition and Analysis for Structural and Electrical Properties of HfO2–TiO2 Composite Films
• Surface and Interface Smoothing of Epitaxial CoSi2 Films by Solid-Phase Epitaxy Using Adsorbed Oxygen Layers and Two-Step Growth on Si(001) Surfaces
• Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition
• Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy
• Local Leakage Current of HfO2 Thin Films Characterized by Conducting Atomic Force Microscopy
• Formation of Palladium Silicide Thin Layers on Si(110) Substrates
• Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition
• Behavior of Local Charge-Trapping Sites in La2O3–Al2O3 Composite Films under Constant Voltage Stress
• Reactive Deposition Epitaxy of CoSi2 Films on Clean and Oxygen-Adsorbed Si(001) Surfaces

もっと見る 閉じる

スポンサーリンク