Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
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概要
- 論文の詳細を見る
We have prepared (001)ZrN films epitaxially grown on (001)Si substrates by a low temperature process using an ultrahigh vacuum magnetron sputtering system, and evaluated their epitaxial relationships and film qualities, using X-ray diffraction (XRD) analysis, X-ray pole figure, grazing incidence angle X-ray reflectivity (GIXR), transmission electron microscopy (TEM) and atomic force microscopy (AFM). It is clarified that (001)ZrN films grow epitaxially on (001)Si even at room temperature with the directional relationship of ZrN(001)[110]$\parallel$Si(001)[110], and the lattice mismatch at the interface between (001)ZrN and (001)Si is relaxed due to the existence of a very thin transition layer. It is also revealed from GIXR and AFM that the epitaxial ZrN films have a high film density and a flat surface morphology, irrespective of substrate temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Zaima Shigeaki
Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University
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Shinkai Satoko
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Yanagisawa Hideto
Department Of Electrical And Electronic Engineering Kitami Institute Of Technology
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Sakai Akira
Department Of Agricultural Chemistry The University Of Tokyo
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Shinkai Satoko
Department of Control Engineering, Takuma National College of Technology, 551 Koda, Takuma-cho, Kagawa 769-1192, Japan
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