Crystal Orientation Change of Ni Films by Sputtering in Ar-N2 Mixed Gases
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概要
- 論文の詳細を見る
Changing the crystal orientation of Ni films by the effect of reactive gas is attempted. It is known that (111)-oriented Ni film is usually obtained by sputtering in pure Ar gas. However, we report that almost single-oriented (100) Ni films are prepared by rf sputtering when a small amount of N2 (1% $<$ N2 flow ratio $<$ 7%) is mixed with Ar gas. By electrical resistivity measurement and Auger electron spectroscopy (AES), the presence of nitrogen in the (100) Ni films is not observed. Consequently, it is found that nitrogen influences the crystal orientation at the growing film surface but is not incorporated into the films. This enables us to prepare Ni films with either (111) orientation or (100) orientation by sputtering in a controlled manner without a postannealing process.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-07-15
著者
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Iibuchi Kyouhei
Department Of Materials Science Kitami Institute Of Technology
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Kawamura Midori
Department Of Materials Science Faculty Of Engineering Kitami Institute Of Technology
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Abe Yoshio
Department of Materials Science and Engineering, Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan
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Abe Yoshio
Department of Materials Science, Kitami Institute of Technology, Kitami 090-8507, Japan
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Iibuchi Kyouhei
Department of Materials Science, Kitami Institute of Technology, Kitami 090-8507, Japan
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Kawamura Midori
Department of Materials Science, Kitami Institute of Technology, Kitami 090-8507, Japan
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Kawamura Midori
Department of Materials Science and Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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