Preparation and Characterizations of Al_3Ta Intermetallic Compound Films : Surfaces, Interfaces and Films
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概要
- 論文の詳細を見る
The intermetallic compound film of Al_3Ta was prepared by co-sputtering at a substrate temperature as low as 400℃. Effects of subsequent annealing in air on the grain growth and on the electrical properties were examined. It is revealed from the Auger electron spectroscopy analysis that the film surface is covered with a thin Al_2O_3 layer which protects the film from further oxidation. The films obtained are sufficiently applicable as a metallization material for large-scale integrated circuits.
- 社団法人応用物理学会の論文
- 1988-07-20
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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UMEZAWA Tomokazu
Faculty of Science and Technology,Keio University
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UMEZAWA Toshiji
Department of Electronic Engineering, Faculcy of Engineering, Kitami Institute of Technology
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Umezawa T
Teijin Ltd. Hiroshima Jpn
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