Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor
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概要
- 論文の詳細を見る
Thin vanadium nitride (VNx) films were grown by atomic layer deposition using tetrakis(diethylamido)vanadium as a precursor and NH3 as a reactant. A growth rate of 0.1 nm/cycle without incubation time is obtained. Transmission electron microscopy reveals that a nanocrystalline texture in random orientation is characteristic of the VNx film, which is favorable as an extremely thin barrier application. A low carbon impurity level (${\sim}6$ at.%) is achieved owing to acceleration of the transamination between the V(NR2)4 precursor and NH3. The lowest resistivity of 120 μ$\Omega$ cm is successfully achieved for the VNx film prepared under optimized conditions.
- 2011-05-25
著者
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Ito Shun
Institute For Materials Research Tohoku University
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Aoyagi Eiji
Institute For Materials Research Tohoku University
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Sato Masaru
Department Of Applied Chemistry School Of Advanced Science And Engineering Faculty Of Science And En
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Aoyagi Eiji
Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
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Sudoh Hiroshi
Gas-Phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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Machida Hideaki
Gas-Phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
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