Oxidation Behavior of Ta Thin Films as a Passivation Layer Deposited on Cu
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概要
- 論文の詳細を見る
The oxidation behavior of Ta films (500 Å) deposited on Cu as a passivation layer to protect Cu from oxidation has been examined. In the present Ta thin fims on Cu, the kinetics of oxidation agree well with one reported in the larger thickness range. Although the outdiffusion of a small amount of Cu through the Ta layer is observed, the Ta layer is effective as a passivation layer during oxidation at 450℃ for 1 h, where the entire Ta layer is completely oxidized.
- 社団法人応用物理学会の論文
- 1996-03-15
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama M
Kitami Inst. Technol. Kitami Jpn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Ichikawa T
Fdk Corp. Shizuoka Jpn
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Ichikawa Takaaki
Department Of Applied Physics Okayama University Of Science
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