Solid-Phase Reactions in Polymorphic Epitaxial Contact Systems of Al/YSi_<2-x>/Si
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概要
- 論文の詳細を見る
Solid-phase reactions taking place in an epitaxial Al/YSi_<2-x>/Si contact system are examined by X-ray diffraction and depth profiling using Auger electron spectroscopy. The diffusion of Al into YSi_<2-x> and the subsequent reaction between Al and Y forming Al_3Y take place after annealing for 1 h at 400 and 450℃, respectively. Although an out-diffusion of Si and Y leads to failure of the contact system, the distribution of Al is restricted to within the initially formed YSi_<2-x> layer without forming Al spikes.
- 社団法人応用物理学会の論文
- 1997-04-15
著者
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TAKEYAMA Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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NOYA Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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FUKUDA Tomoyuki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Fukuda Tomoyuki
Department Of Biophysics Graduate School Of Science Kyoto University
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Fukuda Tomoyuki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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