Transmissin Electron Microscopy Observation of Polymorphic Epitaxial Growth of YSi_<2-x> Layer in Al(001)/YSi_<2-x>/Si(001) Systems

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The structures of compounds in the heteroepitaxial system Al/YSi_<2-x>/Si have been examined by high resolution transmission electron microscopy. YSi_<2-x> grown in two stages by a template method consists of two phases. Hexagonal YSi_<2-x>(12^^-0) (low-temperature phase) grows on Si(001) when Y is deposited at 330℃ and then annealed at 500℃ for 10 min. Subsequent deposition of Y at 330℃ followed by annealing at 330℃ for 1 h results in the growth of tetragonal YSi_<2-x>(001) (high-temperature phase) on the hexagonal phase. The growth of Al(001) on YSi_<2-x> is confirmed. The epitaxial relationship Al[100]⫽tetragonalYSi_<2-x>[100]⫽hexagonalYSi_<2-x>[100]⫽Si[100] is found in this system. It is also revealed that in the formation process of YSi_<2-x>, the tetragonal phase is nucleated first from a supercooled melt in the solid phase and then the hexagonal phase is formed by a polymorphic transformation during annealing at appropriate temperature for the transition.
社団法人応用物理学会の論文
1996-10-15