Formation of [111] Preferentially Oriented Cu Layer on [110] Nb Barrier on SiO_2

概要

論文の詳細を見る
The [111] oriented Cu layer, which was attracted much attention as an interconnect layer of excellent electronmigration resistance; was obtained on the [110] oriented Nb barrier formed on the thermally grown SiO_2 layer. The rocking curves measured by X-ray diffraction revealed the full width at half maximum (FWHM) values of 6.0° and 3.0° for asdeposited [110] Nb and [111] Cu layers, respectively, which was a good measure of the mosaicity in the prepared thin film assembly. This result suggested that the [111] oriented Cu layer of good quality was obtained on amorphous SiO_2 by using the buffer layer of [110] oriented Nb as a diffusion barrier. The model system of Cu/Nb/SiO_2/Si was thermally stable without excess solid-phase reaction and/or diffusion upon annealing at temperatures up to 500℃ or higher.
社団法人電子情報通信学会の論文
2002-06-24