Structural Analyses of Cu[111] Layer on Nb[110] Barrier Formed on SiO_2 (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))

概要

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The preferentially oriented Cu[111] layer as an interconnect of excellent electromigration resistance was obtained on the oriented Nb[110] barrier formed on a thermally grown SiO_2 layer, and the structural characteristic of the obtained Cu/Nb/SiO_2/Si model system was examined. The orientation of the film was determined by obtaining the X-ray pole figure of noticed reflection. The growth of Nb[110] layer on an amorphous SiO_2, and the subsequent growth of Cu[111] layer were confirmed. The observation of the cross-sectional view of the Cu/Nb/SiO_2/Si model system by high resolution transmission electron microscopy also revealed the growth of Nb[110] and Cu[111] textures with about 100 order nm size grains.
社団法人電子情報通信学会の論文
2003-06-23