Evaluation of [111]-Textured Cu Layer Formed on Thin Nb Barrier Layer on SiO_2(Session 8A Silicon Devices V)
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概要
- 論文の詳細を見る
We prepared a Cu layer of [111] preferential orientation on an extremely thin Nb barrier deposited on SiO_2. The Cu/Nb(10nm)/SiO_2/Si specimen was characterized by X-ray diffraction analyses of ω-rocking curve, pole figure, glancing incidence X-ray reflectivity (GIXR), and transmission electron microscopy (TEM). Pronounced (111) reflection in a pole figure and a full width at half maximum value of 〜5° in an ω-rocking curve from the Cu layer indicated formation of Cu [111] texture on the 10nm thick Nb barrier thin enough to apply to the 90nm node technology. The GIXR measurements and TEM observation indicated the stable textured layers without excess interdiffusion and/or reaction at interfaces upon annealing at 500℃ for 1h.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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小間 篤
Department Of Chemistry The University Of Tokyo
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Sato Masaru
Department of Oral Pathology, Asahi University School of Dentistry
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TAKEYAMA Mayumi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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NOYA Atsushi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Tec
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Maniruzzaman Md.
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Hayasaka Yuichiro
Institute For Materials Research Tohoku University
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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AOYAGI Eiji
Institute for Materials Research, Tohoku University
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Aoyagi Eiji
Institute For Materials Research Tohoku University
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Sato Masaru
Department Of Applied Chemistry School Of Advanced Science And Engineering Faculty Of Science And En
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Sato Masaru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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