Thermal Stability of W_2N Film as a Diffusion Barrier between Al and Si
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概要
- 論文の詳細を見る
Thermal stability of the contact system of Al/W_2N/Si is studied by characterization techniques of cross-sectional transmission electron microscopy, X-ray diffraction and Auger electron spectroscopy. It is revealed that the effective suppression of grain growth of W_2N barrier is important to the total stability of this system.
- 社団法人応用物理学会の論文
- 1994-03-15
著者
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HIRAGA Kenji
Institute for Materials Research, Tohoku University
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Hiraga K
Institute For Materials Research Tohoku University
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Hiraga Kenji
Institute For Materials Research
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Sasaki Katsutaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama M
Kitami Inst. Technol. Kitami Jpn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Aoyagi E
Tohoku Univ. Sendai Jpn
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Aoyagi Eiji
Institute For Materials Research Tohoku University
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