Evolution of Microstructures in Nanocrystalline VN Barrier Leading to Failure in Cu/VN/SiO2/Si Systems
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概要
- 論文の詳細を見る
We have investigated the evolution of microstructures in a nanocrystalline VN barrier of ${\sim}10$ nm thickness to clarify the failure mechanism in a Cu/VN/SiO2/Si system owing to high-temperature annealing. Transmission electron microscopy observation reveals that the as-deposited VN barrier shows a uniform layer with a columnar structure composed of grains no larger than 10 nm in size. A negligible change in the morphology of the VN barrier is evident even after annealing at 600 °C for 1 h. Annealing at 800 °C brings about noticeable growth of VN grains in the lateral direction without any solid-phase reaction at each interface, resulting in a failure of the VN barrier owing to local discontinuity of the layer. This result is also consistent with the result obtained by Auger electron spectroscopy. It is revealed that the thin VN barrier fails after annealing at 800 °C for 1 h owing to the loss of the continuity in the lateral direction without chemical reaction and intermixing at barrier interfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-05-25
著者
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Itoi Takaomi
Department Of Electronics And Mechanics Engineering Chiba University
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takaomi Itoi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Kitami Institute of Technology, Kitami, Hokkaido 090-8507, Japan
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