Interfacial Reaction and Electrical Properties in the Sputter-Deposited Al/Ti Ohmic Contact to n-InP
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概要
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The reaction and/or diffusion in the Ti metallizing Al/Ti/n-InP contacts and their correlation with electrical properties have been studied. In the as-deposited Al/Ti/InP contact, interaction between Ti and P and outdiffusion of In into the Ti layer were observed in the initial stage of the reaction process. The reaction between Ti and P resulting in Ti-P compounds and the segregation of decomposed In proceeded during rapid thermal annealing (RTA) treatment, and a stable contact configuration of Al/Ti/In/Ti-P/InP was obtained after RTA treatment at 600℃ for 20 s. An extremely low Schottky barrier height of 0.14 eV was obtained for the as-deposited contact. An ohmic I-V characteristic of the contact without Schottky barrier is demonstrated after RTA treatment. The formation of stable Ti-P compounds seems to be related to the ohmic behavior of the contacts.
- 社団法人応用物理学会の論文
- 1999-02-28
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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小間 篤
Department Of Chemistry The University Of Tokyo
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Noya Atsushi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Takeyama Mayumi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Kitami Institute Of Techn
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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