In-Situ Contactless Characterization of Microscopic and Macroscopic Properties of Si-doped MBE-Grown (2×4) GaAs Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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ISHIKAWA Yasuhiko
Research Institute of Electronics, Shizuoka University
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Ishikawa Yasuhiko
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Ishikawa Y
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Department Of Electronic Engineering Faculty Of Engineering Takushoku University
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Yoshida Tomio
Information Equipment Research Laboratory Matsushita Electric Industrial Co. Ltd.
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Ishikawa Y
Dowa Mining Co. Ltd. Tokyo
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YOSHIDA Toshiyuki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Ishikawa Y
Hokkaido Univ. Sapporo Jpn
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Yoshida Tomoaki
Department Of Materials Science Faculty Of Engineering Tohoku University
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Yoshida Toshiyuki
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Yoshida T
Matsushita Electric Co. Tochigi Jpn
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Yoshida T
Fukuoka Univ. Fukuoka Jpn
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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