Capacitance-Voltage Behavior of Insulated Gate InGaAs HEMT Capacitors Having Silicon Interface Control Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Suzuki S
Nikon Corp. Tokyo Jpn
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Suzuki Setsuo
Energy And Mechanical Research Laboratories Research And Development Center Toshiba Corporation
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Suzuki S
Chiba Institute Of Technology
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Suzuki Suguru
Department Of Materials Science And Engineering Nagoya Institute Of Technology
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SUZUKI Satoshi
Research Institute of Angiocardiology and Cardiovascular Clinic,Faculty of Medicine,Kyushu Universit
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Suzuki Susumu
Chiba Institute Of Technology
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Suzuki S
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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DOHMAE Yasuhiro
Research Center for Interface Quantum Electronics, and Graduate School of Electronics and Informatio
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Suzuki Setsu
School Of Science And Engineering Waseda University
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Dohmae Yasuhiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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