Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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HASHIZUME Tamotsu
Hokkaido University
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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HARTNAGEL Hans
Institut fur Hochfrequenztechnik, Fachbereich Elektrotechnik und Informationstechnik, TU Darmstadt
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Hashizume Tamotsu
Hokkaido Polytechnic College
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SAWADA Takayuki
Research Center for Interface Quantum Electronics, Hokkaido University
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Hartnagel H
Th Darmstadt Darmstadt Deu
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Hartnagel Hans
Institut Fur Hochfrequenztechnik Fachbereich Elektrotechnik Und Informationstechnik Tu Darmstadt
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GRUB Andreas
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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Grub Andreas
Institut Fur Hochfrequentztechnik Technische Hochschule Darmstadt
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Sawada Takayuki
Research Center For Interface Quantum Electronics Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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HARTNAGEL Hans
Institut fur Hochfrequentztechnik, Technische Hochschule Darmstadt
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- FOREWORD