FOREWORD

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概要

• 論文の詳細を見る
• The Institute of Electronics, Information and Communication Engineersの論文

著者

• HASHIZUME Tamotsu

  Hokkaido University

• Hashizume Tamotsu

  Hokkaido Polytechnic College

関連論文

• Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
• 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)
• Fabrication and Characterization of Active and Sequential Circuits Utilizing Schottky-Wrap-Gate-Controlled GaAs Hexagonal Nanowire Network Structures
• Formation of Oxide-Free Nearly Ideal Pt/GaAs Schottky Barriers by Novel In Situ Photopulse - Assisted Electrochemical Process
• Stable Passivation Systems for GaAs Prepared by Room-Temperature Deposition of SiO_2 Films
• Process-Induced Defects in InP Caused by Chemical Vapor Deposition of Surface Passivation Dielectrics
• Deep Level Characterization of Submillimeter-Wave GaAs Schottky Diodes Produced by a Novel In-Situ Electrochemical Process
• Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
• FOREWORD

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