Annealing Behavior of HF-Treated GaAs Capped with SiO_2 Films Prepared by 50-Hz Plasma-Assisted Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Thermal stability of the SiO_2/GaAs interface structures prepared by 50-Hz plasma-assisted chemical vapor deposition (PCVD) and the electrical activation of Si implanted into GaAs with SiO_2 cap were investigated. X-ray photoelectron spectroscopy (XPS) analysis showed that the 50-Hz PCVD method at 200℃ allowed the presence of an As-enriched layer, intentionally inserted by HF treatment before SiO_2 deposition, at the SiO_2/GaAs interface. After rapid thermal annealing (RTA) at 950℃ for 20 s, in fact, the As-enriched layer still remained and it was effective in suppressing interfacial reactions which caused various shortcomings. In addition, carrier concentration profiles in excellent agreement with Lindhard-Scharff-Schiott (LSS) curves were reproducibly obtained by RTA in Si-implanted GaAs capped with both the As-enriched layer and the SiO_2 film, demonstrating that this process is applicable to post-annealing of ion-implanted GaAs.
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Hokkaido Polytechnic College
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Shimozuma M
College Of Medical Technology Hokkaido University
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Shimozuma Mitsuo
College Of Medical Technology Hokkaido University
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Tochitani G
Saga Univ. Saga Jpn
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Tochitani Gen
Department Of Electrical Engineering Saga University
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Hasegawa Hideki
Research Center For Interface Quantum Electronics Hokkaido University : Department Of Electrical Engineering Faculty Of Engineering Hokkaido University
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Tochitani Gen
Department of Electrical and Electronic Engineering, Saga University,
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