Gas-Source Molecular Beam Epitaxial Growth of In_<1-x>Ga_xP on GaAs Using Tertiarybutylphosphine
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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藤倉 序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
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SAI Hironobu
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Sai Hironobu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
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