藤倉序章 | 北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻

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概要

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著作論文

InP加工基板上へのMBE選択成長によるInGaAs/InAlAs量子細線および量子ドットの形成
MBE選択成長InGaAsリッジ量子細線の微細構造評価
C-10-12 MBE選択成長によるInGaAs結合量子構造の形成
新しいゲート構造を有する化合物半導体単電子デバイスの製作と評価
Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
MBE選択成長InGaAsリッジ量子細線の微細構造評価
Extra-Side-Facet Control in Selective Molecular Beam Epitaxial Growth of InGaAs Ridge Quantum Wires for Improvement of Wire Uniformity
Study of Reflection High-Energy Electron Diffraction Oscillation for Optimization of Tertiarybutylphosphine-Based Molecular Beam Epitaxial Growth of In_Ga_P on GaAs
Control of Dot Size and Tunneling Barrier Profile in In_Ga_As Coupled Quantum Wire-Dot Structures Grown by Selective Molecular Beam Epitaxy on Patterned InP Substrates
Gas-Source Molecular Beam Epitaxial Growth of In_Ga_xP on GaAs Using Tertiarybutylphosphine
Controlled Formation of Narrow and Uniform InP-Based In_Ga_As Ridge Quantum Wire Arrays by Selective Molecular Beam Epitaxy
Controlled Formation of Narrow and Uniform InGaAs Ridge Quantum Wire Arrays on Patterned InP Substrates by Selective Molecular Beam Epitaxy
RHEED Oscillation-Based Optimization of Growth Conditions for Gas-Source MBE Growth of InGaP Using Tertiarybutylphosphine
Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
Formation of Two-Dimensional Arrays of InP-Based InGaAs Quantum Dots on Patterned Substrates by Selective Molecular Beam Epitaxy ( Quantum Dot Structures)
Excitation Power Dependent Photoluminescence Behavior in Etched Quantum Wires having Silicon Interlayer-Based Edge Passivation and Its Interpretation
Fabrication of InGaAs Quantum Wires and Dots by Selective Molecular Beam Epitaxial Growth on Various Mesa-Patterned (001)InP Substrates
Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
Excitation Power Dependent Photoluminescence Characterization and Successful Edge Passivation of Etched InGaAs Quantum Wires Formed by Electron Beam Lithography

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