Satou Yoshihiro | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University

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概要

関連著者

Satoh Y
Tokyo Inst. Technol. Tokyo Jpn
HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
Satoh Yoshihiro
Division of Pathology, Isehara Kyodo Hospital
FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
Satoh Yoshihiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
Satoh Yoshihiro
Mitsubishi Electric Corporation
藤倉序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
Okada H
Faculty Of Engineering University Of Toyama
JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
Okada H
Botanical Gardens Faculty Of Science Osaka City University
Satoh Y
Division Of Pathology Isehara Kyodo Hospital
Satou Yoshihiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of

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著作論文

Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates

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