OKADA Hiroshi | Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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概要
- 同名の論文著者
- Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Infの論文著者
関連著者
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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OKADA HIROSHI
Botanical Gardens, Faculty of Science, Osaka City University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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Okada H
Faculty Of Engineering University Of Toyama
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of
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葛西 誠也
Research Center For Integrated Quantum Electronics And Graduate School Of Information Science And Te
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KASAI Seiya
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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FUJIKURA Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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JINUSHI Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of
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藤倉 序章
北海道大学量子界面エレクトロニクス研究センター:電子情報工学専攻
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Satoh Y
Tokyo Inst. Technol. Tokyo Jpn
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Fujikura Hajime
Research Center for Interface Quantum Electronics and Graduate School of Electronics
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Kasai Seiya
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Sapporo 060-8628, Japan
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Satoh Yoshihiro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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Satoh Yoshihiro
Division of Pathology, Isehara Kyodo Hospital
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Sato Taketomo
Graduate School Of Electronics And Information Engineering And Research Center For Integrated Quantu
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Sato Taketomo
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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KANESHIRO Chinami
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Satoh Yoshihiro
Mitsubishi Electric Corporation
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Kaneshiro Chinami
Kanagawa Institute Of Technology
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Kaneshiro C
Kanagawa Institute Of Technology
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Satoh Y
Division Of Pathology Isehara Kyodo Hospital
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Satoh Yoshihiro
Research Center for Interface Quantum Electronics and Graduate School of
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Nakamura Jin
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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TOMOZAWA Hidemasa
Eniwa Research and Development Center, Kyoto Semiconductor Corporation
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HASEGAWA Hideki
Graduate School of Electronics and Information Engineering and Research Center for Integrated Quantu
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IWAYA Masanobu
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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Iwaya Masanobu
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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MURANAKA Tsutomu
Research Center for Integrated Quantum Electronics, Hokkaido University
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KASAI Seiya
Graduate School of Information Science and Technology, Hokkaido University
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Tomozawa Hidemasa
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Tomozawa Hidemasa
Eniwa Research And Development Center Kyoto Semiconductor Corporation
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JINUSHI Keiichiro
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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Sato T
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Kasai Seiya
Graduate School Of Information Science And Technology And Research Center For Integrated Quantum Ele
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Muranaka T
Research Center For Integrated Quantum Electronics And Graduate School Of Electronics And Informatio
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Okada Hiroshi
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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Satou Yoshihiro
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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Muranaka Tsutomu
Research Center for Integrated Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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Hasegawa Hideki
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University, Sapporo 060-8628, Japan
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Hasegawa Hideki
Graduate School of Electronics and Information Engineering and Research Center for
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Hasegawa Hideki
Research Center for Interface Quantum Electronics and Graduate School of Engineering,
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Jinushi Kei-ichiroh
Research Center for Interface Quantum Electronics and Graduate School of Engineering,
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Kasai Seiya
Graduate School of Electronics and Information Engineering, and Research Center
著作論文
- Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
- Chemical and Electrochemical Nanofabrication Processes for Schottky In-Plane Gate GaAs Single and Coupled Quantum Wire Transistors
- Electrical Properties of Nanometer-Sized Schottky Contacts on n-GaAs and n-InP Formed by in Situ Electrochemical Process
- Formation of Size- and Position-Controlled Nanometer Size Pt Dots on GaAs and InP Substrates by Pulsed Electrochemical Deposition
- Size-Controlled Formation of Decananometer InGaAs Quantum Wires by Selective Molecular Beam Epitaxy on InP Patterned Substrates
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Realization of GaAs-Based Single Electron Devices Having Single and Multiple Dots by Schottky In-Plane-Gate Control of Two Dimensional Electron Gas
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Novel Schottky In-Plane Gate Single-Electron Transistors Using GaAs/AlGaAs System Operating up to 10K
- Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
- Basic Control Characteristics of Novel Schottky In-Plane and Wrap Gate Structures Studied by Simulation and Transport Measurements in GaAs and InGaAs Quantum Wires ( Quantum Dot Structures)
- Observation of Coulomb Blockade Type Conductance Oscillations up to 50 K in Gated InGaAs Ridge Quantum Wires Grown by Molecular Beam Epitaxy on InP Substrates
- Formation of Quantum Dots by Schottky Wrap Gate Control of 2DEG and Its Application to Single Electron Transistors
- Observation of Coulomb Blockade Oscillations up to 50K from InP-Based InGaAs Quantum Wires Grown by Molecular Beam Epitaxy
- Transport Characterization of Schottky In-Plane Gate Al_Ga_As/GaAs Quantum Wire Transistors Realized by In-Situ Electrochemical Process
- Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors
- Novel GaAs-Based Single-Electron Transistors with Schottky In-Plane Gates Operating up to 20 K
- Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates