Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-05-15
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics Hokkaido University
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OKADA Hiroshi
Research Center for Interface Quantum Electronics (RCIQE) and Graduate School of Electronics and Inf
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Jinushi Kei-ichiroh
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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JINUSHI Keiichiro
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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Okada H
Botanical Gardens Faculty Of Science Osaka City University
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Hashizume Tamotsu
Research Center For Integrated Quantum Electronics (rciqe) And Graduate School Of Information Scienc
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Hasegawa Hideki
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan
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