Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutylphosphine-Based Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Ishikawa Fumitaro
Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information
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HIRAMA Atsushi
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information
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