Growth of AlGaN/GaN Quantum Wire Structures by Radio-Frequency-Radical-Assisted Selective Molecular Beam Epitaxy on Prepatterned Substrates
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概要
- 論文の詳細を見る
The feasibility of the selective molecular beam epitaxy (MBE) growth of AlGaN/GaN quantum wire (QWR) structures on prepatterned substrates is investigated. The detailed studies on growth features have revealed that size-reducing selective growth is possible on mesa patterns having the <11-20>-orientation, but not on those having the <1-100>-orientations. The behavior reflects complex growth kinetics on high-index crystalline facets. The lateral wire width of QWR structures formed selectively on a top mesa can be controlled by adjusting the growth thickness and the initial size of mesa patterns. From cathodoluminescence (CL) measurements, emission from the embedded AlGaN/GaN QWR structure has been clearly identified.
- Japan Society of Applied Physicsの論文
- 2005-04-30
著者
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HASEGAWA Hideki
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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SATO Taketomo
Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University
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Sato T
Hokkaido Univ. Sapporo Jpn
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OIKAWA Takeshi
Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Scienc
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